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Properties of GaN Homoepitaxial layers grown on GaN epitaxial wafers

机译：在GaN外延晶片上生长的GaN同质外延层的特性

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The lack of GaN substrates is a limiting factor for the development of III-V nitride devices. Recently we porposed to use GaN/SiC epitaxial wafers, consisting of thin GaN layer deposited by hydride vapor phase epitaxy (HVPE) on SiC wafer, as substrates for subsequent growth of III-V nitrides and devices development. These wafers are attractie to be used as substrates for GaN device fabrication because the GaN-based device structures can be grown on these wafers by homoepitaxy without any buffer layer. Due to high SiC thermoconductivity and cleavage possibility, these wafers are especially attractive for high-power electronic and optoelectronic applications. In this paper, we focus on crystal structure, optical and electrical properties of GaN homoepitaxial layers and p-n structures grown by HVPE on GaN/SiC epitaxial wafers. New types of III-V nitride epitaxial wafers are described, inslulating GaN/SiC epitaxial wafers and AlN/SiC epitaxial wafers.
机译：缺少GaN衬底是开发III-V氮化物器件的限制因素。最近，我们有意使用由氢化物气相外延（HVPE）在SiC晶片上沉积的GaN薄层组成的GaN / SiC外延晶片，作为随后生长III-V氮化物和进行器件开发的衬底。这些晶片被吸引用作GaN器件制造的衬底，因为基于GaN的器件结构可以通过同质外延生长在这些晶片上，而无需任何缓冲层。由于高的SiC导热性和裂解的可能性，这些晶圆特别适合大功率电子和光电应用。在本文中，我们专注于GaN同质外延层的晶体结构，光学和电学特性以及HVPE在GaN / SiC外延晶片上生长的p-n结构。描述了新型的III-V族氮化物外延晶片，包括GaN / SiC外延晶片和AlN / SiC外延晶片。

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