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Effect of annealing conditions on structural transformation of ZnS thin film

机译:退火条件对ZnS薄膜结构转变的影响

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Thin films of ZnS and ZnS doped with Cu and Al, i.e. ZnS:Cu, ZnS:[Cu, Al] with the thickness up to 1 μm were deposited by electron-beam evaporation (EBE) from three ZnS, ZnS:Cu and ZnS:[Cu, Al] targets onto ceramic BaTiO_3 and glass substrates heated up to 150-200℃. The films were annealed at the atmospheric pressure in S_2-rich ambient atmosphere at 600-1000℃. The ZnS films were doped with Cu and Cl using the thermal treatment in a mixture of ZnS with the compounds of Cu and Cl. The ZnS:Cu and ZnS:[Cu, Cl] films were Ga co-doped by annealing in the S_2-rich ambient atmosphere with additional vapors of Ga. The duration of each annealing was one hour. X-ray diffraction (XRD) technique and atomic force microscopy (AFM) were used for the investigation. Thin films deposited from different targets have only zincblende crystal structure. The annealing of ZnS, ZnS:Cu films at 1000℃ in S_2-rich atmosphere both with and without Ga co-doping does not result in the change of crystal structure. The diffusion of Cu and Cl into ZnS lattice at the annealing leads to phase transition from zincblende to wurtzite structure at 800℃, change of texture and increase of grain size. The phase transition temperature depends on the presence, type and ratio of doping elements. It was shown that Ga and Cl act as activators of recrystallization processes at the annealing.
机译:通过电子束蒸发(EBE)从三种ZnS,ZnS:Cu和ZnS中沉积厚度达1μm的ZnS和ZnS的铜和铝掺杂薄膜,即ZnS:Cu,ZnS:[Cu,Al] :[Cu,Al]瞄准陶瓷BaTiO_3和加热到150-200℃的玻璃基板。将薄膜在大气压下于富含S_2的环境中于600-1000℃退火。通过在ZnS与Cu和Cl的化合物的混合物中进行热处理,将ZnS膜掺杂有Cu和Cl。 ZnS:Cu和ZnS:[Cu,Cl]薄膜是通过在富含S_2的环境中与额外的Ga蒸气一起退火而共掺杂的Ga。每次退火的时间为一小时。 X射线衍射(XRD)技术和原子力显微镜(AFM)用于研究。从不同靶材沉积的薄膜仅具有闪锌矿晶体结构。 ZnS,ZnS:Cu薄膜在富S_2的气氛中(有和没有Ga共掺杂)在1000℃下的退火不会导致晶体结构的改变。 Cu和Cl在退火过程中扩散到ZnS晶格中导致在800℃从闪锌矿到纤锌矿相的相变,织构的改变和晶粒尺寸的增加。相变温度取决于掺杂元素的存在,类型和比例。结果表明,Ga和Cl在退火过程中起着重结晶过程的活化剂的作用。

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