首页> 外文会议>Zinc Oxide Materials and Devices II; Proceedings of SPIE-The International Society for Optical Engineering; vol.6474 >Influence of annealing in oxygen ambient on crystal properties of rfsputtered PZT layers on ZnO substrates
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Influence of annealing in oxygen ambient on crystal properties of rfsputtered PZT layers on ZnO substrates

机译:氧气环境中退火对ZnO衬底上溅射PZT层晶体性能的影响

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摘要

Lead zirconate titanate PbZr_(52)Ti_(48)O_3 (PZT) layers were deposited on ZnO layers by rf-sputtering at varying substrate temperatures. The effect of annealing on PZT crystal properties has been studied by X-ray diffraction and atomic force microscopy. It is shown that the annealing in oxygen ambient has significant effect on the quality of the deposited PZT layers. The optimum growth temperature has been found to be 650 C.
机译:锆酸钛酸铅PbZr_(52)Ti_(48)O_3(PZT)层通过在不同衬底温度下进行rf溅射沉积在ZnO层上。 X射线衍射和原子力显微镜研究了退火对PZT晶体性能的影响。结果表明,在氧气环境中进行退火对沉积的PZT层的质量有重要影响。已发现最佳生长温度为650C。

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