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首页> 外文会议>Zinc Oxide Materials and Devices II; Proceedings of SPIE-The International Society for Optical Engineering; vol.6474 >Etching of ZnO towards the Development of ZnO Homostructure LEDs
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Etching of ZnO towards the Development of ZnO Homostructure LEDs

机译：ZnO蚀刻对ZnO均质LED的发展

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摘要

Although ZnO has recently gained much interest as an alternative to the Ill-Nitride material system, the development of ZnO based optoelectonic devices is still in its infancy. Significant material breakthroughs in p-type doping of ZnO thin films and improvements in crystal growth techniques have recently been achieved, making the development of optoelectonic devices possible. ZnO is known to be an efficient UV-emitting material (～380 nm) at room temperature, optical UV lasing of ZnO has been achieved, and both homojunction and hybrid heterojunction LEDs have been demonstrated.In this paper, processing techniques are explored towards the achievement of a homo-junction ZnO LED. First, a survey of current ZnO processing methods is presented, followed by the results of our processing research.Specifically, we have examined etching through an n-ZnO layer to expose and make contact to a p-ZnO layer.
机译：尽管ZnO作为一种替代Ill-Nitride材料系统的替代品引起了广泛的兴趣，但基于ZnO的光电子器件的开发仍处于起步阶段。最近已经实现了ZnO薄膜的p型掺杂的重大材料突破和晶体生长技术的改进，这使得光电子器件的开发成为可能。众所周知，ZnO在室温下是一种有效的紫外线发射材料（〜380 nm），已经实现了ZnO的光学UV激光发射，并且已经证明了同质结和杂化异质结LED均在本文中进行研究。均质结ZnO LED的实现。首先，对当前的ZnO加工方法进行了概述，然后给出了我们的加工研究结果。具体地说，我们研究了通过n-ZnO层进行蚀刻以暴露并接触p-ZnO层的情况。

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