Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films

M. Mehta; M. Ruth; K. A. Piegdon; D. Krix; H. Nienhaus; C. Meier

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Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films

机译：块状ZnO单晶和分子束外延生长ZnO膜的电感耦合等离子体反应离子刻蚀

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Dry etching processes for bulk-single crystal zinc oxide (ZnO) and molecular beam epitaxy (MBE) grown ZnO have been investigated using inductively coupled plasma (ICP) of CH_4 and SiCl_4 based plasma chemistry. The CH_4-based chemistry showed a higher etch rate than the SiCl_4 based chemistry, presumably due to the formation of highly volatile metal organic zinc compound. The influence of base pressure, radio frequency table power, and ICP power on etch rate was studied. Auger electron spectroscopy has been employed to examine the surface stoichiometry of etched ZnO using both plasma chemistries. Furthermore, with optimized process parameters, the effect of plasma etching on the optical properties of MBE grown ZnO film is studied. An enhancement of the band edge luminescence along with almost complete suppression of defect level luminescence in hydrogen-containing plasma treated ZnO film has been observed.

机译：使用基于CH_4和SiCl_4的电感耦合等离子体（ICP），研究了体单晶氧化锌（ZnO）和分子束外延（MBE）生长的ZnO的干法蚀刻工艺。基于CH_4的化学物质显示出比基于SiCl_4的化学物质更高的蚀刻速率，这大概是由于形成了高挥发性的金属有机锌化合物。研究了基本压力，射频工作台功率和ICP功率对蚀刻速率的影响。俄歇电子能谱法已经被用于使用两种等离子体化学方法来检查蚀刻的ZnO的表面化学计量。此外，利用优化的工艺参数，研究了等离子体刻蚀对MBE生长的ZnO薄膜光学性能的影响。已经观察到在含氢的等离子体处理的ZnO膜中带边缘发光的增强以及缺陷水平发光的几乎完全被抑制。

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《Journal of Vacuum Science & Technology》 |2009年第5期|2097-2101|共5页
作者
M. Mehta; M. Ruth; K. A. Piegdon; D. Krix; H. Nienhaus; C. Meier;
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作者单位

Experimental Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Str. 100, 33098 Paderborn, Germany;

Experimental Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Str. 100, 33098 Paderborn, Germany;

Experimental Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Str. 100, 33098 Paderborn, Germany;

Experimental Physics and Center for Nanointegration (CeNIDE), University of Duisburg-Essen, Lotharstr. 1, 47057 Duisburg, Germany;

Experimental Physics and Center for Nanointegration (CeNIDE), University of Duisburg-Essen, Lotharstr. 1, 47057 Duisburg, Germany;

Experimental Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Str. 100, 33098 Paderborn, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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2. Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy [J] . Lu Zhong-Lin, Zou Wen-Qin, Xu Ming-Xiang, 中国物理：英文版 . 2010,第007期
3. Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy [J] . 路忠林, 邹文琴, 徐明祥, 中国物理：英文版 . 2010,第007期

机译：分子束外延生长单晶和双晶ZnO薄膜的结构和电学性质
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5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

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机译：由分子束外延生长的散装ZnO薄膜的紫外线起源

Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films

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