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Nucleation and growth of chemical vapor deposited diamond films.

机译：化学气相沉积金刚石薄膜的成核和生长。

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摘要

This research involves a study of the nucleation and growth processes during diamond chemical vapor deposition (CVD) via numerical modeling and simulations. Numerical models have been developed: (1) to examine the chemistry of the intermediate layer that forms at the interface between diamond and non-diamond substrate, (2) to understand the nucleation, size and structure of diamond phase carbon clusters on Si(111) substrates, (3) to study the morphological instabilities associated with diamond growth during chemical vapor deposition.;The chemistry of the intermediate layer that develops at the interface between diamond and non-diamond substrate during chemical vapor deposition is analyzed using a thermodynamic quasiequilibrium model. Substrates of Si, Mo, W, Ti, Ta, Fe and Ni are examined, and operating parameters such as the substrate temperature, reactor pressure, and CH;A theoretical study of the nucleation, size, and structure of diamond-phase carbon clusters on Si(111) substrates is presented. Silicon is chosen as the non-diamond substrate in this work as it is a common substrate material for diamond deposition. Molecular mechanics analysis has been utilized to predict energetically and entropically feasible pathways for nucleation of carbon clusters. Several mechanistic pathways for nucleation of carbon clusters are examined with ;The diamond CVD process has been examined theoretically and the morphological instabilities associated with the growth of diamond films have been investigated with a model based on the continuum species conservation equations coupled to surface reaction kinetics. An analytical model is developed to study the morphological instabilities of the diamond-gas interface during the diamond CVD process based on the linear and nonlinear perturbation theories. Linear stability analysis cannot be used to analyze the evolution of the unstable planar interface to a nonplanar cellular interface. Nonlinear analysis is carried out to study the growth behavior of an interface more accurately over a longer period of time. A two-dimensional numerical model describes the evolution of the gas-solid interface. The numerical and analytical models determine the critical parameters affecting the diamond deposition layer morphology. A dispersive relation is derived which relates the effects of species diffusive transport towards the growing interface, surface diffusion, surface tension, and geometrical factors with the stability of perturbations on the interface. (Abstract shortened by UMI.).
机译：这项研究涉及通过数值建模和模拟研究金刚石化学气相沉积（CVD）过程中的成核和生长过程。已经开发了数值模型：（1）检查在金刚石和非金刚石基底之间的界面处形成的中间层的化学性质，（2）了解Si（111）上的金刚石相碳簇的形核，尺寸和结构）基底，（3）研究化学气相沉积过程中与金刚石生长有关的形态不稳定性。;使用热力学拟平衡模型分析化学气相沉积过程中在金刚石与非金刚石基底之间的界面处形成的中间层的化学性质。检查了Si，Mo，W，Ti，Ta，Fe和Ni的基底，并确定了基底温度，反应堆压力和CH等操作参数;金刚石相碳簇的成核，尺寸和结构的理论研究提出了在Si（111）衬底上的沉积。硅被选作这项工作的非金刚石基底，因为硅是金刚石沉积的常用基底材料。分子力学分析已被用来预测碳簇成核的能量和熵可行途径。使用碳原子团簇成核的几种机制途径进行了研究；理论上研究了金刚石CVD工艺，并使用基于连续物种守恒方程式与表面反应动力学相结合的模型研究了与金刚石膜生长相关的形态不稳定性。基于线性和非线性摄动理论，建立了一个分析模型来研究金刚石CVD过程中金刚石-气体界面的形貌不稳定性。线性稳定性分析不能用于分析不稳定平面界面向非平面细胞界面的演变。进行非线性分析以更长时间地更准确地研究界面的生长行为。二维数值模型描述了气固界面的演变。数值和分析模型确定影响金刚石沉积层形态的关键参数。推导了一种扩散关系，该关系将物种向生长界面的扩散运输，表面扩散，表面张力和几何因子的影响与界面上的扰动稳定性相关联。 （摘要由UMI缩短。）。

著录项

  • 作者

    Mahalingam, Pushpa.;

  • 作者单位

    Colorado State University.;

  • 授予单位 Colorado State University.;
  • 学科 Chemical engineering.;Materials science.
  • 学位 Ph.D.
  • 年度 1997
  • 页码 171 p.
  • 总页数 171
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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