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首页> 外文学位 >Electrical properties and chemical sensing application of gallium trioxide and gallium nitride nanowires.
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Electrical properties and chemical sensing application of gallium trioxide and gallium nitride nanowires.

机译：三氧化镓和氮化镓纳米线的电性能和化学传感应用。

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摘要

One-dimensional nano-structured materials have been researched intensively due to unique characteristics. Single crystalline nanowires (NWs) have large surface to volume ratio and high thermal/chemical stability which are desirable properties for chemical sensing application. In this thesis, NWs of Ga2O3 and GaN are researched for nano-sensor application. At first, NWs were synthesized by vapor-liquid-solid growth mechanism while morphology and properties of NWs were controlled by experimental variables such as catalyst, growth temperature, and carrier gas. Transferring these NWs to the substrates, three types of device structure (Bush, random multiple and single NWs devices) were made with Pt contacts. Ga2O3 multiple NWs grown in C reduction showed high response time and conduction mechanism which is similar to thin film device even though grain boundaries did not exist. On the other hand, Ga2O3 multiple NWs grown in N2 showed inverse signal behavior possibly resulting from surface reaction between oxide and hydrogen. Sensing result of Ga2O 3 bush NWs device was similar to previous studies of Ga2O 3 multi-grain ceramic structures. Sensitivity of Ga2O 3 bush NWs had improved compared to Ga2O3 multiple NWs devices. GaN multiple NWs and single NWs also showed fast response and low noise levels, although sensitivity was not comparable to Ga2O 3 devices. Electrical conductance of GaN NWs devices was orders of magnitude higher than that of to Ga2O3 NWs devices, which can help the signal process of sensor. In conclusion, we have demonstrated NWs sensors for hydrogen detection working at low temperature and with rapid response.
机译：由于独特的特性，一维纳米结构材料已经得到了深入的研究。单晶纳米线（NWs）具有大的表面体积比和高的热/化学稳定性，这是化学传感应用所需的特性。本文研究了Ga2O3和GaN的NWs在纳米传感器中的应用。首先，通过汽-液-固生长机制合成了净水，同时通过催化剂，生长温度和载气等实验变量控制了净水的形态和性能。将这些NW转移到基板上，使用Pt触点制作了三种类型的器件结构（布什，随机的多个和单个NW器件）。即使不存在晶界，通过减碳生长的Ga2O3多个NW仍具有较高的响应时间和导电机制，与薄膜器件相似。另一方面，在N2中生长的Ga2O3多个NW显示出相反的信号行为，这可能是由于氧化物和氢之间的表面反应所致。 Ga 2 O 3衬套NWs器件的感测结果与先前对Ga 2 O 3多晶粒陶瓷结构的研究相似。与Ga2O3多个NW器件相比，Ga2O 3灌木丛NW的灵敏度有所提高。 GaN的多个NW和单个NW也显示出快速响应和低噪声水平，尽管灵敏度不能与Ga2O 3器件相提并论。 GaN NWs器件的电导率比Ga2O3 NWs器件的电导率高几个数量级，这有助于传感器的信号处理。总之，我们已经证明了用于氢气检测的NWs传感器可在低温下快速响应。

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  • 作者

    Kim, Jinyong.;

  • 作者单位

    University of Pennsylvania.;

  • 授予单位 University of Pennsylvania.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 92 p.
  • 总页数 92
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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