• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Investigation of Thermal Stress Degradation in Indium-Gallium-Zinc-Oxide TFTs
【24h】

Investigation of Thermal Stress Degradation in Indium-Gallium-Zinc-Oxide TFTs

机译：铟镓锌氧化物TFT的热应力降解研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The performance of IGZO TFTs has improved significantly in recent years, however device stability still remains a significant issue. Thermal stability of IGZO TFTs be- comes very crucial to ensure desired performance of end-product. Both bottom-gate (BG) and double-gate (DG) TFTs were observed to degrade with hotplate treatments under 200 °C. Such events are rarely reported in the literature, and thus became the primary focus of this work. The mechanism causing the instability is not completely understood, however experimental results indicate the instability occurs either di- rectly or indirectly due to the influence of H2O within the passivation oxide above the IGZO channel region. DG TFTs saw more pronounced degradation, which led to the hypothesis that there may be a reaction of the top gate metal with H2O molecules in the passivation oxide, liberating monatomic hydrogen. Both H2O and hydrogen behave as donor states in IGZO, thus rendering the channel more conduc- tive. The thermal stability also demonstrated a dependence on channel length, with shorter channel devices showing greater stability. This may be due to the metalized source/drain regions acting as effective getter to water during a 400 °C passivation anneal which is performed prior to top-gate metal deposition. This hypothesis led to an investigation on atomic layer deposition (ALD) of capping layers over the passiva- tion oxide of IGZO TFTs to act as an effective barrier to water/hydrogen migrating to the underlying IGZO channel.
机译：近年来，IGZO TFT的性能已有显着提高，但是器件稳定性仍然是一个重要问题。 IGZO TFT的热稳定性对于确保最终产品的理想性能至关重要。观察到在200°C下进行热板处理时，底栅（BG）和双栅（DG）TFT均会降解。此类事件很少在文献中报道，因此成为这项工作的主要焦点。导致不稳定性的机理尚不完全清楚，但是实验结果表明，由于IGZO沟道区上方钝化氧化物中H2O的影响，直接或间接发生了不稳定性。 DG TFT的降解更为明显，这导致了以下假设：钝化氧化物中顶栅金属可能与H2O分子发生反应，释放出单原子氢。 H2O和氢都在IGZO中充当供体态，因此使通道更具导电性。热稳定性还显示出对沟道长度的依赖性，较短的沟道器件显示出更高的稳定性。这可能是由于在顶栅金属沉积之前执行的400°C钝化退火过程中，金属化的源极/漏极区域充当了有效的吸水剂。该假设导致对IGZO TFT的钝化氧化物上的覆盖层的原子层沉积（ALD）进行研究，以作为有效的阻挡水/氢迁移到下面的IGZO通道的屏障。

著录项

  • 作者

    Ganesh, Prashant.;

  • 作者单位

    Rochester Institute of Technology.;

  • 授予单位 Rochester Institute of Technology.;
  • 学科 Electrical engineering.;Engineering.
  • 学位 M.S.
  • 年度 2017
  • 页码 63 p.
  • 总页数 63
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 公共建筑;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号