The structure characteristics of the new power device SiC MOSFET and the mechanism of the reverse re-covery of the body diode are analyzed in detail, and the calculation process of the voltage and current of the reverse recovery process is derived. At the same time, a double pulse test platform is built, and the effects of the most common external factors, such as varied turn-off voltage, forward current and series parasitic inductance, on the reverse recovery behavior of the body diode of SiC MOSFET is analyzed by the methods of experiment and simula-tion. In addition, the reverse recovery performances of the body diode of SiC MOSFET, Si MOSFET and fast recov-ery diode are compared at the same voltage level. Related research results show that the body diode of SiC MOSFET can be used as a continuous flow channel in the converter without anti-paralleling a fast recovery diode, which has a certain reference value for practical engineering applications.%详细分析了新型功率器件SiC MOSFET的结构特点及其寄生体二极管的反向恢复机理，推导了反向恢复过程的电压与电流计算；同时，搭建了双脉冲实验测试平台，通过实验和仿真的方法，测试了不同关断电压、正向导通电流和串联寄生电感这些最常见的外部因素对SiC MOSFET寄生体二极管反向恢复特性的影响；此外，对比测试了同电压等级的SiC MOSFET、 Si MOSFET寄生体二极管和快恢复二极管的反向恢复性能。相关结果表明SiC MOSFET寄生体二极管可以作为变换器中的续流通道而不必额外再单独反并联快恢复二极管，对实际工程应用有一定的借鉴意义。
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