The effect of total dose radiation on power VDMOSFETs of two different patterns has been presentedrnThe stripe cell pattern is the more promising pattern in the total dose radiation hardness of power VDMOSFETsrnthan hexagon cell patterns. Institute of Microelectronics of Chinese Academy of Sciences has developed striperncell power VDMOSFETs of high total dose radiation hardness ability. The products can be immune from 1 400rnkrad(Si).%对2种不同结构的功率VDMOS晶体管进行了总剂量辐照的试验研究,条形栅结构比元胞型结构具有抗总剂量辐照的结构优势,中国科学院微电子研究所利用条形栅结构制作出高抗总剂量辐照能力的功率VDMOS晶体管,抗总剂量能力可达1 400 krad(Si)以上.
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