以N管阈值电压作为表征参数,对典型CMOS器件CC4-007在稳态和脉冲γ辐射下的辐射效应与退火特性进行了实验研究,初步探讨了辐射损伤与退火机理.为满足实验需要,设计了抗闭锁辐照实验系统和弱电流测试电路.研究结果表明,CMOS器件在稳态和脉冲γ辐照下产生的损伤效应和退火特性具有明显差异,相同累积剂量条件下,稳态辐照产生的器件损伤明显大于脉冲辐照；相同退火时间时,脉冲辐照退火快于稳态辐照.%Radiation effect and annealing character of typical CMOS irradiated by steady - state and transient pulse γ- rays were studyed, and the mechanism of CMOS radiation damage and annealing is analysed . In the paper, a latchup prevention system and a test circuit of weak current are also designed for the experimental research. The result shows that the ionizing radiation damage and annealing of CMOS devices is very different between the steady - state and transient pulse γ- rays radiation. With the same total ionizing dose, radiation damage of CMOS devices from steady - state γ- rays radiation is more than that from transient pulse γ- rays radiation, and with the same time, annealing irradiated by steady - state γ- rays is slowly than than irradiated by transient pulse γ- rays.
展开▼
