为了在低温衬底(＜ 500℃)上制备出高品质纳米金刚石薄膜,使用辉光等离子体辅助热丝化学气相沉积法,用甲烷、高纯氢为源气体,P型Si (100)为衬底材料,在低温条件下合成了纳米金刚石薄膜,利用Langmuir探针对合成过程进行了实时原位诊断,研究了电子温度Te和电子密度ne的空间变化规律,探讨薄膜生长机理.对所合成的样品,利用扫描电子显微镜、Raman光谱仪、X射线衍射进行了分析.结果表明,实验所得样品为高品质、结晶完善、表面光滑的纳米金刚石薄膜,SEM形貌表明薄膜中晶粒的粒度为40～90 nm,Raman光谱在1331.5 cm-1处出现了金刚石的(111)特征声子峰.XRD谱在2θ =43.90、75.30处出现了金刚石的(111)、(220)特征衍射峰.实验得出了低温合成纳米金刚石薄膜的最佳工艺条件:①甲烷体积百分比浓度为0.6％；②反应室气压为5 kPa；③气体流量在1100～1300 mL/min范围内成核密度较高,并以(100)、(111)面为主,晶粒的平均粒度小于100 nm；在流量为1300 mL/min时,晶粒的生长表现为一定的定向生长.%In order to synthesize high quality diamond film at low temperature ( < 500 ℃ ) , the nano-diamond thin films were prepared by the GPCVD ( glow plasma chemical vapour deposition) technique. The diagnosis of plasma environment for synthesizing diamond film was conducted by Langmuir single probe. The surface morphology, microstructure, and components of the films were characterized by the scanning electron microscopy ( SEM) , X-ray diffraction( XRD) and Raman. The results show that the high-quality nanocrystalline diamond film without doping is obtained at low deposition temperature.
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