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首页> 美国卫生研究院文献>Materials >Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
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Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

机译：1°偏角的4H-SiC硅面同质外延层生长过程中3C夹杂物形成的抑制

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摘要

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during epitaxial growth. 3C-SiC nucleation is proposed to trigger the formation of 3C inclusions. We suppressed 3C-inclusion formation by performing deep in situ etching and using a high C/Si ratio, which removed substrate surface damage and improved the 4H-SiC stability, respectively. The as-grown epitaxial layers had rough surfaces because of step bunching due to the deep in situ etching, but the rough surface became smooth after chemical mechanical polishing treatment. These techniques allow the growth of epitaxial layers with 1° off-angles for a wide range of doping concentrations.
机译：我们在4H碳化硅（SiC）Si面基板上以1°斜角生长了外延层。研究了在高C / Si比生长过程中抑制3C夹杂物形成的原因，因为需要具有高C / Si比的生长技术以减少残留的氮结合。在衬底和外延层之间的界面处以及在外延生长期间均产生了3C夹杂物。提出3C-SiC成核以触发3C夹杂物的形成。通过进行深度原位蚀刻并使用高C / Si比，我们抑制了3C夹杂物的形成，从而消除了基板表面的损伤并提高了4H-SiC的稳定性。生长的外延层由于深原位蚀刻而由于台阶成束而具有粗糙的表面，但是在化学机械抛光处理之后，粗糙的表面变得光滑。这些技术允许在宽范围的掺杂浓度下以1°偏角生长外延层。

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