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首页> 美国卫生研究院文献>Materials >Reactions in Electrodeposited Cu/Sn and Cu/Ni/Sn Nanoscale Multilayers for Interconnects
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Reactions in Electrodeposited Cu/Sn and Cu/Ni/Sn Nanoscale Multilayers for Interconnects

机译：用于互连的电沉积Cu / Sn和Cu ​​/ Ni / Sn纳米多层膜中的反应

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Miniaturization of electronic devices has led to the development of 3D IC packages which require ultra-small-scale interconnections. Such small interconnects can be completely converted into Cu-Sn based intermetallic compounds (IMCs) after reflow. In an effort to improve IMC based interconnects, an attempt is made to add Ni to Cu-Sn-based IMCs. Multilayer interconnects consisting of stacks of Cu/Sn/Cu/Sn/Cu or Cu/Ni/Sn/Ni/Sn/Cu/Ni/Sn/Ni/Cu with Ni = 35 nm, 70 nm, and 150 nm were electrodeposited sequentially using copper pyrophosphate, tin methanesulfonic, and nickel Watts baths, respectively. These multilayer interconnects were investigated under room temperature aging conditions and for solid-liquid reactions, where the samples were subjected to 250 °C reflow for 60 s and also 300 °C for 3600 s. The progress of the reaction in the multilayers was monitored by using X-ray Diffraction, Scanning Electron Microscope, and Energy dispersive X-ray Spectroscopy. FIB-milled samples were also prepared for investigation under room temperature aging conditions. Results show that by inserting a 70 nanometres thick Ni layer between copper and tin, premature reaction between Cu and Sn at room temperature can be avoided. During short reflow, the addition of Ni suppresses formation of Cu3Sn IMC. With increasing Ni thickness, Cu consumption is decreased and Ni starts acting as a barrier layer. On the other hand, during long reflow, two types of IMC were found in the Cu/Ni/Sn samples which are the (Cu,Ni)6Sn5 and (Cu,Ni)3Sn, respectively. Details of the reaction sequence and mechanisms are discussed.
机译：电子设备的小型化导致了需要超小型互连的3D IC封装的发展。回流后，此类小型互连可完全转换为基于Cu-Sn的金属间化合物（IMC）。为了改善基于IMC的互连，试图将Ni添加到基于Cu-Sn的IMC中。依次电沉积由Cu / Sn / Cu / Sn / Cu或Cu / Ni / Sn / Ni / Sn / Cu / Ni / Sn / Ni / Cu且Ni = 35 nm，70 nm和150 nm的堆叠组成的多层互连分别使用焦磷酸铜，甲烷磺酸锡和镍瓦茨浴。这些多层互连在室温老化条件下进行固液反应研究，样品在250°C下回流60 s，在300°C下回流3600 s。通过使用X射线衍射，扫描电子显微镜和能量色散X射线光谱法监测多层中的反应进程。还准备了FIB研磨的样品，用于在室温老化条件下进行研究。结果表明，通过在铜和锡之间插入70纳米厚的镍层，可以避免室温下铜和锡之间的过早反应。在短时回流期间，添加Ni会抑制Cu3Sn IMC的形成。随着Ni厚度的增加，Cu的消耗减少，Ni开始充当阻挡层。另一方面，在长时间回流期间，在Cu / Ni / Sn样品中发现了两种IMC，分别为（Cu，Ni）6Sn5和（Cu，Ni）3Sn。讨论了反应顺序和机理的细节。

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