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首页> 外文期刊>Advanced Functional Materials >Charge Transfer within the F_4TCNQ-MoS_2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application
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Charge Transfer within the F_4TCNQ-MoS_2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application

机译：F_4TCNQ-MoS_2 van der Waals接口内的电荷转移：面向电气特性调整和气体传感应用

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摘要

The development of van der Waals heterostructures in 2D materials systems has attracted considerable interests for exploring new insights of (opto-) electrical characteristics, device physics, and novel functional applications. Utilizing organic molecular material with strong electron withdrawing ability, charge transfer van der Waals interfaces are formed between 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) and MoS2, via which the modulation of the onset voltages and optimization of subthreshold swing values in MoS2-based field effect transistors are realized. Charge transfer process and its functionality mechanisms are further verified and investigated with first-principles calculation, scanning Kelvin probe microscope characterization, and temperature-dependent electrical characterization. With the charge transfer effect between reducing gas molecules and F(4)TCNQ, NH3 gas sensor is proposed and fabricated with the sensitivity reaching higher than 1000% at 100 ppm, much more outstanding performance than those of any reported MoS2-based NH3 gas sensors. The F(4)TCNQ-MoS2 hybrid strategy might open up a pathway for tuning and optimizing the electrical properties, in addition to novel functional units designing and fabrications in electric devices based on low-dimensional semiconducting systems.
机译：二维材料系统中的范德华异质结构的发展引起了人们极大的兴趣，他们探索了（光）电特性，器件物理和新颖的功能应用的新见解。利用具有强电子吸收能力的有机分子材料，在2,3,5,6-四氟-7,7,8,8-四氰基喹二甲烷（F（4）TCNQ）和MoS2之间形成电荷转移范德华界面，基于MoS2的场效应晶体管实现了起始电压的调制和亚阈值摆幅值的优化。通过第一性原理计算，扫描开尔文探针显微镜表征以及与温度相关的电表征，进一步验证和研究了电荷转移过程及其功能机制。利用还原气体分子和F（4）TCNQ之间的电荷转移效应，提出并制造了NH3气体传感器，其灵敏度在100 ppm时可达到1000％以上，其性能比任何已报道的基于MoS2的NH3气体传感器都要出色。 。 F（4）TCNQ-MoS2混合策略除了为基于低维半导体系统的电子设备中新颖的功能单元设计和制造之外，还可能为调整和优化电性能开辟道路。

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