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An Electrical Rectifier Based on Au Nanoparticle Array Fabricated Using Direct-Write Electron Beam Lithography

机译：基于直接电子束光刻技术的金纳米粒子阵列电整流器

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摘要

Close-packed arrays of Au nanopartides are produced in patterned regions by electron beam (e-beam) lithography using a highly sensitive direct-write resist, N~+AuCI_4~-C_8H_(17)_4Br. While the e-beam causes dewetting of the resist to nucleate Au nanopartides, the following step of thermolysis aids particle growth and removal of the organic part. Thus formed arrays contain Au nanopartides. Such arrays are patterned into ≈ 10 μm wide stripes between Au contact pads on SiO_2/Si substrates to realize electrical rectification. Under forward bias, the device exhibits a threshold voltage of+4.3 V and a high current rectification ratio of 3 × 10~5, which are stable over many repetitive measurements. The threshold voltage of the rectifier can be reduced by applying an electric stress or by varying the electron dosage used for array formation. The nanoparticle rectifier element could be transferred onto flexible substrates such as PDMS, where the nanoparticle coupling is influenced by swelling of the substrate. Obviously, the nanoparticle size, shape, and the spacing in array are all important for the rectifier device performance. Based on the electrical measurements the mechanism of rectification is found to be due to switching of electrical conduction with applied bias, from short-distance tunneling to F-N type tunneling followed by transient filament formation.
机译：使用高度敏感的直写抗蚀剂N〜+ AuCI_4〜-C_8H_（17）_4Br，通过电子束（电子束）光刻在图案化的区域中生成紧密堆积的Au纳米粒子阵列。当电子束使抗蚀剂脱湿以使金纳米粒子成核时，随后的热解步骤有助于颗粒生长和有机部分的去除。如此形成的阵列包含Au纳米粒子。此类阵列在SiO_2 / Si基板上的Au接触焊盘之间被图案化为≈10μm宽的条纹，以实现电整流。在正向偏置下，该器件具有+4.3 V的阈值电压和3×10〜5的高电流整流比，在许多重复测量中均保持稳定。可通过施加电应力或通过改变用于阵列形成的电子剂量来降低整流器的阈值电压。纳米颗粒整流器元件可以被转移到诸如PDMS的柔性基板上，其中纳米颗粒的耦合受到基板膨胀的影响。显然，纳米颗粒的大小，形状和阵列间距对于整流器器件的性能都至关重要。基于电学测量，发现整流机理是由于在施加偏压的情况下电导通的切换，从短距离隧穿到F-N型隧穿，然后形成瞬态灯丝。

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  • 来源
    《Advanced Functional Materials》 |2012年第13期|p.2837-2845|共9页
  • 作者

    Boya Radha; Giridhar U. Kulkarni;

  • 作者单位

    Chemistry and Physics of Materials Unit and DST Unit on Nanoscience Jawaharlal Nehru Centre for Advanced Scientific Research Jakkur P.O., Bangalore 560064, India;

    Chemistry and Physics of Materials Unit and DST Unit on Nanoscience Jawaharlal Nehru Centre for Advanced Scientific Research Jakkur P.O., Bangalore 560064, India;

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