Preparation of a Freestanding AIN Substrate from a Thick AIN Layer vGrown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport

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• 来源
  《》 |2012年第5期|p.055504.1-055504.3|共3页
• 作者

  Yoshinao Kumagai; Yuki Kubota; Tom Nagashima; Tom Kinoshita; Rafael Dalmau; Raoul Schlesser; Baxter Moody; Jinqiao Xie; Hisashi Murakami; Akinori Koukitu; Zlatko Sitar;

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• 作者单位

  Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

  Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247, Japan;

  Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247, Japan;

  Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247, Japan;

  HexaTech, Inc., Morrisville, NC 27560, U.S.A.;

  HexaTech, Inc., Morrisville, NC 27560, U.S.A.;

  HexaTech, Inc., Morrisville, NC 27560, U.S.A.;

  HexaTech, Inc., Morrisville, NC 27560, U.S.A.;

  Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

  Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;

  HexaTech, Inc., Morrisville, NC 27560, U.S.A. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, U.S.A.;

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• 正文语种 eng
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