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首页> 外文期刊>Applied physics express >Thermal stability of ferroelectricity in hafnium-zirconium dioxide films deposited by sputtering and chemical solution deposition for oxide-channel ferroelectric-gate transistor applications
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Thermal stability of ferroelectricity in hafnium-zirconium dioxide films deposited by sputtering and chemical solution deposition for oxide-channel ferroelectric-gate transistor applications

机译：通过溅射和化学溶液沉积氧化物通道铁电栅晶体管应用沉积的氧化铪 - 二氧化锆膜中铁电性的热稳定性

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摘要

Stability of ferroelectricity in hafnium-zirconium oxide (HZO) films deposited by sputtering and chemical solution deposition (CSD) has been investigated. After confirming the ferroelectricity of both sputtered HZO and CSD yttrium-doped HZO (Y-HZO) films, indium-tin-oxide (ITO) was deposited by sputtering on sputtered HZO or CSD Y-HZO layer to fabricate metal-ferroelectric-semiconductor (MFS) structure. It was found that the sputtered HZO films in the MFS structure became paraelectric after re-annealing in N-2 which was confirmed by both X-ray diffraction pattern and electrical measurements. On the other hand, the CSD Y-HZO films showed ferroelectric nature even after re-annealing with a negligible monoclinic phase.
机译：研究了通过溅射和化学溶液沉积沉积的氧化铪 - 氧化锆（HZO）膜（CSD）的铁电性稳定性。 在确认溅射的HZO和CSD钇掺杂的HZO（Y-HZO）薄膜的铁电性后，通过在溅射的HZO或CSD Y-HZO层上溅射沉积氧化铟锡（ITO）以制造金属 - 铁电半导体（ MFS）结构。 发现MFS结构中的溅射的HZO膜在通过X射线衍射图案和电测量中确认的N-2中重新退火后成为电池。 另一方面，CSD Y-HZO薄膜即使在用可忽略的单斜相后重新退火后也显示出铁电性质。

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