首页> 外文期刊>Applied Physics A: Materials Science & Processing >Fabrication of Step-and-Flash Imprint Lithography (S-FIL) templates using XeF_2 enhanced focused ion-beam etching
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Fabrication of Step-and-Flash Imprint Lithography (S-FIL) templates using XeF_2 enhanced focused ion-beam etching

机译:使用XeF_2增强的聚焦离子束刻蚀制造分步闪光压印光刻(S-FIL)模板

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摘要

The fabrication of Step-and-Flash Imprint Lithography (S-FIL) templates with line widths of 50 nm is described in this work. The structures have been patterned using a Ga~+ focused ion beam (FIB) in a quartz template. FIB milling is generally accompanied with re-deposition effects, which represent a hindrance to densely patterned nanostructures required in most NIL applications. To reduce these re-deposition effects, in this research, xenon difluoride (XeF_2) enhanced FIB etching was applied that also increases the material removal rates in comparison to pure kinetic ion sputtering. To optimise the process when using XeF_2 gas the following ion scanning parameters have been examined: ion dose, beam current, dwell time and beam overlap (step size). It has been found that the assisting gases at very low doses do not bring significant etching enhancements whilst the sputtering rates have increased at high doses. Using the XeF_2 gas-assisted etching, FIB structuring has been used to fabricate <100 nm structures onto quartz S-FIL templates. The presence of XeF_2 considerably enhances the etching rate of quartz without any significant negative effects onrnthe spatial resolution of the FIB lithographic process and reduces the template processing time.
机译:在这项工作中描述了线宽为50 nm的步进闪光压印光刻(S-FIL)模板的制造。使用石英模板中的Ga〜+聚焦离子束(FIB)对结构进行了构图。 FIB铣削通常会伴随着再沉积效应,这代表了大多数NIL应用中所需的密集图案化纳米结构的障碍。为了减少这些再沉积效应,在这项研究中,使用了二氟化氙(XeF_2)增强的FIB蚀刻,与纯动力离子溅射相比,它还提高了材料去除率。为了在使用XeF_2气体时优化过程,已经检查了以下离子扫描参数:离子剂量,束流,停留时间和束流重叠(步长)。已经发现,非常低剂量的辅助气体不会带来显着的蚀刻增强,而高剂量时的溅射速率却增加了。使用XeF_2气体辅助蚀刻,已使用FIB结构在石英S-FIL模板上制造<100 nm结构。 XeF_2的存在大大提高了石英的蚀刻速率,而对FIB光刻工艺的空间分辨率没有任何明显的负面影响,并减少了模板处理时间。

著录项

  • 来源
  • 作者

    J. Kettle; R.T. Hoyle; S. Dimov;

  • 作者单位

    Microelectronics and Nanostructures Group, School of Electrical and Electronics Engineering, University of Manchester, Sackville St. Campus, Manchester, M60 1QD, UK Microbridge Services Ltd., Cardiff University, The Parade, Newport rd., Cardiff, CF24 3AA, Wales, UK;

    Microbridge Services Ltd., Cardiff University, The Parade, Newport rd., Cardiff, CF24 3AA, Wales, UK;

    Manufacturing Engineering Centre, School of Engineering, Cardiff University, The Parade, Newport rd., Cardiff, CF24 3AA, Wales, UK;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanolithography; charged-particle beam sources and detectors;

    机译:纳米光刻;带电粒子束源和探测器;

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