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首页> 外文期刊>Applied Surface Science >Patterning of hafnia and titania via gas-phase soft lithography combined with atomic layer deposition
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Patterning of hafnia and titania via gas-phase soft lithography combined with atomic layer deposition

机译：通过气相软光刻结合原子层沉积对of和二氧化钛进行构图

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摘要

Novel titania and hafnia structures on top of silica wafer were produced using atomic layer deposition through the accessible pores created by a patterned polydimethylsiloxane (PDMS) stamp in conformal contact. Typically, the processing temperature was in the range of 125 ℃ in order to avoid damaging the stamp and also to create an amorphous metal oxide deposit. Interestingly, the deposit formation tended to be dominated by condensation of the metal oxide precursor and water in the vicinity of the contact edges of the stamp and substrate. Upon removal of the stamp, the deposit patterns thus exhibited narrow features of much finer lateral resolution than the channel width of the stamp. Furthermore, it was demonstrated that oxide patterns of complex geometries were formed through the accessible pores.
机译：使用原子层沉积通过图案化聚二甲基硅氧烷（PDMS）压模保形接触所产生的可及性孔，在硅片顶部制备了新型的二氧化钛和氧化f结构。通常，加工温度在125℃的范围内，以避免损坏印模并产生非晶态金属氧化物沉积物。有趣的是，沉积形成倾向于由压模和基底的接触边缘附近的金属氧化物前体和水的缩合控制。因此，在去除压模时，沉积图案显示出狭窄的特征，其横向分辨率比压模的通道宽度细得多。此外，证明了通过可进入的孔形成了复杂几何形状的氧化物图案。

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