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Modeling the effects of particle deformation in chemical mechanical polishing

机译：模拟化学机械抛光中颗粒变形的影响

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摘要

In a chemical mechanical polishing (CMP) process, an active abrasive particle participating in the wear process will contact the pad and the wafer at the same time. The applied polishing load causes the deformation of the pad in the contact interface of the particle and the pad, and the deformation of the wafer in the contact interface of the particle and the wafer. Besides, this force causes the deformation of the abrasive particle. Based on the elastic-plastic micro-contact mechanics and abrasive wear theory, a novel model for material removal rate (MRR) with consideration of the abrasive particle deformation is presented in this paper. The deformation of the abrasive particle, affecting the indentation depth of the particle into the wafer, is quantitatively incorporated into the model. The results and analyses show that the present model is in good agreement with the experimental data.
机译：在化学机械抛光（CMP）过程中，参与磨损过程的活性磨料颗粒将同时接触垫和晶片。施加的抛光载荷引起在颗粒和垫的接触界面中的垫的变形，以及在颗粒和晶片的接触界面中的晶片的变形。此外，该力导致磨料颗粒变形。基于弹塑性微接触力学和磨料磨损理论，提出了一种考虑磨料颗粒变形的材料去除率（MRR）模型。将影响颗粒进入晶片的压痕深度的磨料颗粒变形定量地纳入模型中。结果与分析表明，该模型与实验数据吻合良好。

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