机译:中频等离子体化学气相沉积制备a-C:H薄膜的结构和硬度
State Key Laboratory of Advanced Welding Production Technology, Harbin Institute of Technology, Harbin 150001, China School of Mechanical Science and Engineering, Northeast Petroleum University, Daqing 163318, China;
National Key Laboratory of Science and Technology on Precision Hot Processing of Metals Harbin Institute of Technology, Harbin 150001, China School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China;
School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001, China;
State Key Laboratory of Advanced Welding Production Technology, Harbin Institute of Technology, Harbin 150001, China;
National Key Laboratory of Science and Technology on Precision Hot Processing of Metals Harbin Institute of Technology, Harbin 150001, China;
School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China;
School of Material Science & Engineering, Harbin Institute of Technology, Harbin 150001, China;
a-C:H films; MF-PCVD; Structure; Hardness; Elastic modulus;
机译:沉积条件对血浆辅助化学气相沉积法制备的A-C:H:SIOx薄膜光学性质的影响
机译:沉积条件对血浆辅助化学气相沉积法制备的A-C:H:SIOx薄膜力学性能的影响
机译:等离子体增强了CH_4-CO_2等离子体中a-C:H薄膜的化学气相沉积:气体成分和基材偏向对薄膜结构和生长过程的影响
机译:通过等离子体增强化学气相沉积(PECVD)制备的氢化非晶碳(a-C:H)膜的表面改性
机译:等离子体增强了硅薄膜的化学气相沉积:利用等离子体诊断技术表征不同频率和气体成分下的薄膜生长。
机译:射频等离子体增强化学气相沉积(RF PECVD)反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
机译:通过射频等离子体辅助化学气相沉积法在晶体硅上生长的高取向六方氮化硼薄膜的微观结构
机译:通过脉冲准分子激光沉积制备的a-C:N薄膜的结构和性质