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Growth Of P-Fesi2 Thin Film On Textured Silicon Substrate For Solar Cell Application

机译:P-Fesi2薄膜在太阳能电池用纹理硅基板上的生长

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摘要

(2 02)/(22 0)-oriented epitaxial (3-FeSi_2 thin films were deposited on textured Si (1 00) substrate by magnetron sputtering. The influences of thickness and annealing temperature on the (3-FeSi2 crystallization were studied to find the optimal condition. The results of surface morphology and optical property measurements showed that the inverted pyramid array in the surface of p-FeSi_2 thin films could reduce the surface reflection of β-FeSi2. In dark condition, the β-FeSi_2/textured-Si heterojunction showed diode property with rectifying ratio of 2.89 x 10_5 and built-in potential of 0.58V. These results indicated the potential application of textured Si substrate in P-FeSi_2 solar cells.
机译:磁控溅射在织构的Si(1 00)衬底上沉积(2 02)/(22 0)取向的(3-FeSi_2)薄膜,研究了厚度和退火温度对(3-FeSi2)结晶的影响表面形貌和光学性能的测试结果表明,p-FeSi_2薄膜表面的倒金字塔结构可以降低β-FeSi2的表面反射;在黑暗条件下,β-FeSi_2/纹理化Si异质结表现出二极管特性,整流比为2.89 x 10_5,内建电势为0.58V,这些结果表明结构化Si衬底在P-FeSi_2太阳能电池中的潜在应用。

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  • 来源
    《Applied Surface Science》 |2011年第23期|p.10168-10171|共4页
  • 作者单位

    School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, People's Republic of China;

    School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, People's Republic of China Guangdong Provincial Key Laboratory of Short-Range Wireless Detection and Communication, South China University of Technology, Guangzhou 510640, People's Republic of China;

    School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, People's Republic of China Guangdong Provincial Key Laboratory of Short-Range Wireless Detection and Communication, South China University of Technology, Guangzhou 510640, People's Republic of China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    P-FeSi_2; Textured silicon; Magnetron sputtering; Heterojunction;

    机译:P-FeSi_2;结构化硅;磁控溅射;异质结;

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