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首页> 外文期刊>Applied Surface Science >Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithography
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Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithography

机译：通过100q keV Ar离子束光刻制造的硅结构的深度控制

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摘要

Ion beam lithography of a silicon surface using an Ar ion beam with an ion energy in the order of hundreds of keV is demonstrated in this study. A specially designed ion irradiation facility was employed that enabled generation and irradiation with a highly accelerated and highly charged Ar ion beam. An ion-beam-induced amorphous layer on a silicon substrate can be selectively etched in hydrofluoric acid, whereas, a non-irradiated area is scarcely etched and, consequently, a concave structure can be fabricated on the irradiated area. To control the depth of the structure, parameters for dependence of the depth on ion irradiation were investigated. As a result, the depth of irradiated area can be controlled by the ion energy that is adjusted by the acceleration voltage and the ion charge. In addition, the etch resistance of the irradiated area increases with an increase in ion energy due to the crystalline layer formed on the surface. Simulation results reveal that the depth is strongly related to the defect distribution induced by ion irradiation. These results indicate the potential use of this method for novel three-dimensional lithography.
机译：在这项研究中证明了使用Ar离子束对硅表面进行离子束光刻，该离子束的离子能量约为数百keV。使用了专门设计的离子辐照设备，该设备能够以高度加速和高电荷的Ar离子束产生和辐照。可以在氢氟酸中选择性地蚀刻硅衬底上的离子束诱导的非晶层，而几乎不蚀刻非照射区域，因此可以在照射区域上制造凹结构。为了控制结构的深度，研究了深度对离子辐射的依赖性的参数。结果，可以通过由加速电压和离子电荷调节的离子能量来控制照射区域的深度。另外，由于形成在表面上的结晶层，所以随着离子能量的增加，被照射区域的耐蚀刻性也增加。仿真结果表明，深度与离子辐照引起的缺陷分布密切相关。这些结果表明该方法可用于新型三维光刻。

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