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首页> 外文期刊>Applied Surface Science >An electrostatic force microscope study of Si nanostructures on Si(1 0 0) as a function of post-annealing temperature and time
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An electrostatic force microscope study of Si nanostructures on Si(1 0 0) as a function of post-annealing temperature and time

机译：静电力显微镜研究Si（1 0 0）上Si纳米结构与退火后温度和时间的关系

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摘要

The evolution of Si nanostructures induced by Ar~+ ion sputtering on Si(1 0 0) was studied with electrostatic force microscopy (EFM) as a function of post-annealing temperature (T = room temperature-800℃) and time (t = 0-160 min). The post-annealing of the nanostructure was conducted in vacuum. It was found that with T increasing, the EFM contrast degraded steadily and became nearly undetectable at T = 800℃; with t increasing at T = 800℃, the EFM contrast fell down steadily as well. However, the surface morphology and roughness were much less affected after annealing. The results suggest that the as-formed Si nanostructures may not be epitaxially grown on Si(1 0 0) substrate as claimed before. A plane capacitance model supported this conclusion.
机译：利用静电力显微镜（EFM）研究了Ar〜+离子溅射在Si（1 0 0）上诱导的Si纳米结构随退火温度（T =室温-800℃）和时间（t = 0-160分钟）。纳米结构的后退火在真空中进行。发现随着T的增加，EFM对比度稳定下降，在T = 800℃时几乎无法检测到。随着t在T = 800℃时升高，EFM对比度也逐渐下降。但是，退火后表面形态和粗糙度的影响要小得多。结果表明，所形成的Si纳米结构可能没有如先前所要求的在Si（1 0 0）衬底上外延生长。平面电容模型支持这一结论。

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