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首页> 外文期刊>Applied Surface Science >Field electron emission improvement of ZnO nanorod arrays after Ar plasma treatment
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Field electron emission improvement of ZnO nanorod arrays after Ar plasma treatment

机译：Ar等离子体处理后ZnO纳米棒阵列的场电子发射改善

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摘要

Vertically well-aligned single crystal ZnO nanorod arrays were synthesized and enhanced field electron emission was achieved after radio-frequency (rf) Ar plasma treatment. With Ar plasma treatment for 30 min, flat tops of the as-grown ZnO nanorods have been etched into sharp tips without damaging ZnO nanorod geometrical morphologies and crystallinity. After the Ar ion bombardment, the emission current density increases from 2 to 20 μA cm~(-2) at 9.0 V μm~(-1) with a decrease in turn-on voltage from 7.1 to 4.8 V μm~(-1) at a current density of 1 μA cm~(-2), which demonstrates that the field emission of the as-grown ZnO nanorods has been efficiently enhanced. The scanning electron microscopy (SEM) results, in conjunction with the results of transmission electron microscopy (TEM), Raman spectroscopy and photoluminescence observation, are used to investigate the mechanisms of the field emission enhancement. It is believed that the enhancements can be mainly attributed to the sharpening of rod tops, and the decrease of electrostatic screening effect.
机译：合成了垂直排列良好的单晶ZnO纳米棒阵列，并通过射频（rf）Ar等离子体处理实现了增强的场电子发射。通过Ar等离子体处理30分钟，已生长的ZnO纳米棒的平坦顶部被蚀刻成尖锐的尖端，而不会损坏ZnO纳米棒的几何形态和结晶度。轰击Ar离子后，发射电流密度在9.0 Vμm〜（-1）时从2μAcm〜（-2）增加到20μAcm〜（-2），而开启电压从7.1 V降至4.8 Vμm〜（-1）在1μAcm〜（-2）的电流密度下，这表明已生长的ZnO纳米棒的场发射得到了有效增强。扫描电子显微镜（SEM）的结果，与透射电子显微镜（TEM），拉曼光谱和光致发光观察的结果一起，用于研究场发射增强的机理。可以认为，增强作用主要归因于棒顶的锐化和静电屏蔽效果的降低。

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