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首页> 外文期刊>Applied Surface Science >Crystallization Of Amorphous Zirconium Thin Film Using Ion Implantation By A Plasma Focus Of 1 Kj
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Crystallization Of Amorphous Zirconium Thin Film Using Ion Implantation By A Plasma Focus Of 1 Kj

机译：1 Kj等离子体聚焦离子注入非晶锆薄膜的晶化

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摘要

In this work preliminary results of amorphous zirconium crystallization using ion beam pulses are presented. Energetic argon- and oxygen-ion beams generated by a plasma focus device were used to promote crystallization on amorphous ZrO_2-2.5 mol% Y_2O_3 film deposited by chemical solution deposition onto silica glass substrate. The films were burnt at 370 ℃ for 1 h in normal atmosphere previous to plasma irradiation. The irradiation was performed by means of successive pulses of ion beams. The evolution of the surface morphology and crystallization was followed by AFM and X-rays diffraction in a grazing incidence asymmetric Bragg geometry (GIAB), respectively. Argon-irradiated films showed highly nucleated cubic zirconia after 10 pulses. On the other hand, oxygen-irradiated films showed a delayed and less extensive cubic nucleation, but a more ordered structure and well-defined grains.
机译：在这项工作中，提出了使用离子束脉冲进行非晶态锆结晶的初步结果。由等离子体聚焦装置产生的高能氩和氧离子束用于促进在通过化学溶液沉积到石英玻璃基板上沉积的非晶ZrO_2-2.5 mol％Y_2O_3膜上的结晶。在等离子辐射之前，将膜在370℃的正常气氛中燃烧1小时。通过连续的离子束脉冲进行照射。分别在掠入射非对称布拉格几何（GIAB）中通过AFM和X射线衍射追踪表面形态和结晶的演变。氩气辐照的薄膜在10个脉冲后显示出高度成核的立方氧化锆。另一方面，氧辐照的薄膜显示出延迟的和较不广泛的立方成核，但结构更加有序且晶粒清晰。

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