A study of dynamic SIMS analysis of low-k dielectric materials

Mowat IA; Lin XF; Fister T; Kendall M; Chao G; Yang MH

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A study of dynamic SIMS analysis of low-k dielectric materials

机译：低k介电材料的动态SIMS分析研究

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Dynamic SIMS is an established tool for the characterization of dielectric layers in semiconductors, both for contaminant levels and for composition. As the silicon-based semiconductor industry moves towards the use of copper rather than aluminum, there is also a need to use lower k-dielectric materials to reduce RC delays and to reduce cross-talk between closely spaced metal lines. New dielectric materials pose serious challenges for implementation into semiconductor processes and also for the analytical scientist doing measurements on them.

机译：动态SIMS是用于表征半导体中电介质层（污染物水平和成分）的成熟工具。随着基于硅的半导体工业朝着使用铜而不是铝的方向发展，还需要使用较低的k介电材料来减少RC延迟并减少间距很小的金属线之间的串扰。新的介电材料对于在半导体工艺中实施以及对分析人员进行测量提出了严峻的挑战。

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来源
《Applied Surface Science》 |2006年第19期|p. 7182-7185|共4页
作者
Mowat IA; Lin XF; Fister T; Kendall M; Chao G; Yang MH;
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作者单位

Evans Analyt Grp, Sunnyvale, CA 94086 USA;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
low-k dielectric; charge compensation; electron beam effects; polymers; COPPER;

机译：低k介质;电荷补偿;电子束效应;聚合物;COPPER;

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1. ToF-SIMS studies of nanoporous PMSSQ materials: kinetics and reactions in the processing of low-K dielectrics for ULSI applications [J] . Lazzeri P, Rubloff GW, Vanzetti L, Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2004,第4期

机译：纳米多孔PMSSQ材料的ToF-SIMS研究：用于ULSI应用的低K电介质加工的动力学和反应
2. Analysis of Leakage Current of Low-k Materials for Use as Interlayer Dielectric [J] . Takuya FUKUDA, Hirotaka NISHINO, Hiroshi YANAZAWA Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第1期

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3. Mechanisms of oxygen plasma damage of amine and methyl terminated organosilicate low-k dielectrics from ab initio molecular dynamics simulations [J] . J M Rimsza, J A Kelber, Jincheng Du Journal of Physics, D. Applied Physics: A Europhysics Journal . 2014,第33期

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4. Simple, reliable Cu/low-k interconnect integration using mechanically-strong low-k dielectric material: silicon-oxycarbide [C] . Furusawa, T., Sakuma, Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International . 2000

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5. Mechanical reliability of porous low-k dielectrics for advanced interconnect: Study of the instability mechanisms in porous low-k dielectrics and their mediation through inert plasma induced re-polymerization of the backbone structure. [D] . Sa, Yoonki. 2015

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6. Study of Materials Deformation in Nanometric Cutting by Large-scale Molecular Dynamics Simulations [O] . QX Pei, C Lu, HP Lee, 2009

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7. SIMS study of Cu trapping and migration in low-k dielectric films [O] . Yupu Lia, Jerry Huntera, Tom J. Tateb 2004

机译：低k介质薄膜中Cu捕获和迁移的sIms研究

A study of dynamic SIMS analysis of low-k dielectric materials

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