• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Influence of annealing atmosphere on ZnO thin films grown by MOCVD
【24h】

Influence of annealing atmosphere on ZnO thin films grown by MOCVD

机译：退火气氛对MOCVD生长ZnO薄膜的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

ZnO films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Annealing treatments for as-deposited samples were performed in different atmosphere under various pressures in the same chamber just after growth. The effect of annealing atmosphere on the electrical, structural, and optical properties of the deposited films has been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), Hall effect, and optical absorption measurements. The results indicated that the electrical and structural properties of the films were highly influenced by annealing atmosphere, which was more pronounced for the films annealed in oxygen ambient. The most significant improvements for structural and electrical properties were obtained for the film annealed in oxygen under the pressure of 60 Pa. Under the optimum annealing condition, the lowest resistivity of 0.28 Ω cm and the highest mobility of 19.6 cm~2 v~(-1) s~(-1) were obtained. Meanwhile, the absorbance spectra turned steeper and the optical band gap red shifted back to the single-crystal value.
机译：ZnO膜通过金属有机化学气相沉积（MOCVD）沉积在c面蓝宝石衬底上。刚生长后，在不同的气氛中，在同一腔室中以不同的压力对沉积的样品进行退火处理。借助于X射线衍射（XRD），原子力显微镜（AFM），霍尔效应和光吸收测量，研究了退火气氛对沉积膜的电，结构和光学性能的影响。结果表明，退火气氛对薄膜的电学和结构性能有很大的影响，这对于在氧气环境中退火的薄膜更为明显。在60 Pa的压力下在氧气中退火的薄膜获得了最显着的结构和电性能改进。在最佳退火条件下，最低电阻率为0.28Ωcm，最高迁移率为19.6 cm〜2 v〜（- 1）获得s〜（-1）。同时，吸收光谱变陡并且光学带隙红移回到单晶值。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号