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首页> 外文期刊>Applied Surface Science >Effect of substrate bias on SE, XPS and XAES studies of diamond-like carbon films deposited by saddle field fast atom beam source
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Effect of substrate bias on SE, XPS and XAES studies of diamond-like carbon films deposited by saddle field fast atom beam source

机译：衬底偏压对鞍场快速原子束源沉积类金刚石碳膜SE，XPS和XAES的影响

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This paper reports the effect of positive substrate bias (V_s) varying from 0 to 180 Von the spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS) and X-ray Auger electron spectroscopy (XAES) studies of diamond-like carbon (DLC) films deposited using CH_4 gas as a feedstock into a saddle field fast atom beam (FAB) source. The values of optical constants like refractive index (n) and extinction coefficient (k) of the deposited DLC films were determined using a two phase model. The values of 'n' were found to fall in the range from 1.505 to 1.720 and 'k' from 0.03 to 0.125 by application of different values of V_s. Value of these optical constants were found to decrease with the increase of substrate bias up to 90 V and then increase beyond this value. Position of C 1s peak evaluated from XPS data was found to occur at 286.09 +- 0.18 eV in DLC films deposited by application of different values of V_s. Observation of full width at half maximum (FWHM) (τ) value (1.928 eV at V_s = 0 V, 2.0eV at V_s = 90 Vand 1.89eVat V_s = 180 V) clearly hinted the existence of a point of inflection in the properties of DLC films deposited using FAB source this way. A parameter 'D' defined as the distance between the maximum of positive going excursion and the minimum of negative going excursion was calculated in the derivative XAES spectra. The values of 'D' evaluated from XAES data for DLC films were found to be 14.8, 14.5 and 15.2 at V_s = 0, 90 and 180 V, respectively. The sp~2 percentage was calculated for samples deposited this way and was found to be low and lie approximately at 5.6, 2.8, 2.3, 5.7 and 11.5 for different values of V_s = 0, 50, 90, 150 and 180 V. The sp~3 content percentage and sp~3/sp~2 ratio was found to be 94.4 and 16.7, 97.7 and 42.5 at V_s = 0 and 90 V, respectively. Beyond V_s = 90 V these values started decreasing. Mainly, a point of inflection in all the properties of DLC films studied over here at around 90 V of applied substrate bias has been observed, which has been explained on the basis of existing theories in the literature.
机译：本文报道了类金刚石碳的椭偏光谱法（SE），X射线光电子能谱（XPS）和X射线俄歇电子能谱（XAES）研究了从0到180 V的正基片偏压（V_s）的影响（使用CH_4气体作为原料沉积到鞍场快速原子束（FAB）源中的DLC）薄膜。使用两相模型来确定所沉积的DLC膜的光学常数的值，例如折射率（n）和消光系数（k）。通过施加不同的V_s值，发现“ n”的值落在1.505至1.720的范围内，并且“ k”的落在0.03至0.125的范围内。发现这些光学常数的值随着衬底偏压的增加而减小，直到90 V，然后超过该值而增加。发现通过XPS数据评估的C 1s峰的位置出现在通过施加不同的V_s值沉积的DLC膜中的286.09±0.18eV处。观察半峰全宽（FWHM）（τ）值（V_s = 0 V时为1.928 eV，V_s = 90 V时为2.0eV，而V_s = 180 V时为1.89eVat）清楚地暗示了特性的拐点存在使用FAB源沉积的DLC膜就是这种方式。在导数XAES光谱中计算出定义为正向偏移最大值与负向偏移最小值之间的距离的参数“ D”。从XAES数据得出的DLC薄膜的“ D”值在V_s = 0、90和180 V时分别为14.8、14.5和15.2。对于以这种方式沉积的样品，计算了sp〜2百分比，发现该百分比较低，并且对于V_s = 0、50、90、150和180 V的不同值，大约分别为5.6、2.8、2.3、5.7和11.5。在V_s = 0和90 V时，〜3含量百分比和sp〜3 / sp〜2比率分别为94.4和16.7、97.7和42.5。超过V_s = 90 V时，这些值开始减小。主要地，已经观察到在这里在约90V的施加的衬底偏压下在这里研究的DLC膜的所有特性的拐点，这已经基于文献中的现有理论进行了解释。

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