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首页> 外文期刊>Condensed Matter >Photoluminescence of Rare-Earth Ions in the Nanocrystalline GaAs/SnO2 Heterostructure and the Photoinduced Electrical Properties Related to the Interface
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Photoluminescence of Rare-Earth Ions in the Nanocrystalline GaAs/SnO2 Heterostructure and the Photoinduced Electrical Properties Related to the Interface

机译：纳米晶GaAs / SnO2异质结构中稀土离子的光致发光和与界面有关的光致电学性质

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Deposition of an SnO2 thin film was carried out by sola??gel-dip-coating and doped with Ce3+ or Eu3+, and a GaAs layer was deposited by resistive evaporation or sputtering. This investigation combines the emission properties of these rare-earth ions with the unique transport properties generated by the heterostructure assembly. Illumination with light with energy above the GaAs bandgap and below the SnO2 bandgap drastically increases the GaAs/SnO2 heterostructure conductance, which becomes practically temperature-independent. This was associated with the presence of interface conduction, possibly a two-dimensional electron gas at the GaAs/SnO2 interface. This feature takes place only for the sample where the GaAs bottom layer is deposited via sputtering. Irradiation with energies above the SnO2 bandgap only excites the top oxide layer. The heterostructure assembly GaAs/SnO2:Eu leads to emission from Eu3+, unlike SnO2 deposition directly on a glass substrate, where the Eu3+ transitions are absent. Eu emission comes along a broad band, located at a higher energy compared to Eu3+ transitions, which are blue-shifted as the thermal annealing temperature increases. Luminescence from Ce3+ ions in the heterostructure can be detected, but the ions overlap with emission from the matrix, and a cleaning procedure helps to identify Ce3+ transitions.
机译：通过溶胶-凝胶浸涂进行SnO 2薄膜的沉积并掺杂Ce 3+或Eu 3+，并通过电阻蒸发或溅射沉积GaAs层。这项研究将这些稀土离子的发射特性与异质结构组装产生的独特传输特性结合在一起。在GaAs带隙以上和SnO2带隙以上的能量进行光照射会大大增加GaAs / SnO2异质结构的电导率，这实际上与温度无关。这与界面传导的存在有关，界面传导可能是在GaAs / SnO2界面处的二维电子气。此功能仅对通过溅射沉积GaAs底层的样品有效。用高于SnO2带隙的能量进行辐照只会激发顶部氧化层。异质结构组件GaAs / SnO2：Eu导致Eu3 +发射，这与SnO2直接沉积在不存在Eu3 +跃迁的玻璃基板上不同。与Eu3 +跃迁相比，Eu发射沿宽频带分布，处于较高的能量，随着Eu3 +跃迁随着热退火温度的升高而发生蓝移。可以检测到异质结构中Ce3 +离子的发光，但这些离子与基质的发射重叠，并且清洁程序有助于识别Ce3 +跃迁。

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