Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

Dorokhin M. V.; Zdoroveyshchev A. V.; Malysheva E. I.; Danilov Yu. A.

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Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

机译：具有由过渡元件掺杂的InGaAs / GaAs量子点的异质结构。第一部分：光致发光性质

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The optical properties of InGaAs/GaAs quantum dot heterostructures that are doped by manganese and chromium during growth by Metal-organic vapor phase epitaxy have been studied. Surface topography photoluminescence spectra measurements have demonstrated the possibility of controlling the spectral characteristics of the structure by varying quantum well growth conditions and sizes in the presence of impurity atoms. Research results are explained by the peculiarities of InAs nanoclusters formation on the GaAs surface in the presence of Mn and Cr atoms.

机译：研究了由金属 - 有机气相外延生长期间由锰和铬掺杂的InGaAs / GaAs量子点异质结构的光学性质。表面形貌光致发光光谱测量已经证明了通过在杂质原子存在下改变量子孔生长条件和尺寸来控制结构的光谱特性。在Mn和Cr原子存在下，通过在GaAs表面上形成的INAS纳米团簇的特性来解释研究结果。

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来源
《Technical physics》 |2017年第9期|共5页
作者
Dorokhin M. V.; Zdoroveyshchev A. V.; Malysheva E. I.; Danilov Yu. A.;
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Lobachevsky Nizhny Novgorod State Univ Res Physicotech Inst Pr Gagarina 23 Nizhnii Novgorod 603950 Russia;

Lobachevsky Nizhny Novgorod State Univ Res Physicotech Inst Pr Gagarina 23 Nizhnii Novgorod 603950 Russia;

Lobachevsky Nizhny Novgorod State Univ Res Physicotech Inst Pr Gagarina 23 Nizhnii Novgorod 603950 Russia;

Lobachevsky Nizhny Novgorod State Univ Res Physicotech Inst Pr Gagarina 23 Nizhnii Novgorod 603950 Russia;

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1. Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties [J] . Dorokhin M. V., Zdoroveyshchev A. V., Malysheva E. I., Technical physics . 2017,第9期

机译：具有由过渡元件掺杂的InGaAs / GaAs量子点的异质结构。第一部分：光致发光性质
2. Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures [J] . Andrius Rimkus, Evelina Pozingyte, Ramunas Nedzinskas, Optical and quantum electronics . 2016,第3期

机译：InAs-GaAs和InAs-InGaAs-GaAs量子点异质结构的温度相关调制反射率和光致发光
3. Temperature stability of photoluminescence in heterostructures with InGaAs/GaAs quantum well and Mn-delta-doped acceptor layer in GaAs barrier [J] . Dorokhin M.V., Danilov Y.A., Prokofeva M.M., Technical physics letters: Letters to the Russian journal of applied physics . 2010,第9期

机译：GaAs势垒中具有InGaAs / GaAs量子阱和Mn-δ掺杂受体层的异质结构中光致发光的温度稳定性
4. THE ANISOTROPY OF ELECTRICAL PROPERTIES OF InGaAs/GaAs HETEROSTRUCTURES WITH CHAINS OF InGaAs QUANTUM DOTS [C] . O. V. VAKULENKO, S. L. GOLOVYNSKYI, S. V. KONDRATENKO Physics, chemistry and applications of nanostructures : Reviews and short notes . 2011

机译：带有InGaAs量子点链的InGaAs / GaAs异质结构的电特性各向异性
5. Theoretical Insight into the Manipulation of the Optical and Magnetic Properties of Transition-Metal-doped II-VI Semiconductor Quantum Dots [D] . May, Joseph William 2014

机译：过渡金属掺杂的II-VI半导体量子点的光学和磁性性质操纵的理论见解
6. Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots [O] . Arka B. Dey, Milan K. Sanyal, Ian Farrer, -1

机译：未封盖和GaAs封盖的外延InGaAs量子点的光致发光与结构性质的相关性
7. Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures [O] . Rimkus A, Pozingyte E, Nedzinskas R, 2016

机译：Inas-Gaas和Inas-InGaas-Gaas量子点异质结构的温度依赖性调制反射率和光致发光

Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

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