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首页> 外文期刊>Crystal Structure Theory and Applications >ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior
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ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

机译：使用新型氧化钛缓冲层的蓝宝石上的ZnO异质外延：光电行为

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摘要

Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340°C using Ti2O3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.
机译：通过在10 K下通过低温光致发光研究了在10 K下使用Ti2O3缓冲层通过等离子辅助外延在340°C下通过等离子体辅助外延生长的ZnO外延层的光电性能，与不使用c-蓝宝石和不使用a-蓝宝石的层相比缓冲层。由自由激子发射和中性施主约束的激子发射组成的近带边发射显着取决于缓冲层的厚度，并以在约0.8 nm的非常薄的缓冲层上生长的层中的自由激子发射为主，而在c-蓝宝石的ZnO层中观察到了中性供体结合的激子的强发射。结构行为表明施主源于ZnO层的三维生长，光电特征的细节表明残留的施主是Al和间隙性Zn。

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