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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition
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The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

机译：ZnO缓冲层对脉冲激光沉积在蓝宝石上生长的磷掺杂ZnO薄膜性能的影响

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摘要

The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.
机译：研究了通过脉冲激光沉积在蓝宝石上生长的磷掺杂ZnO薄膜的性能，特别是针对未掺杂的ZnO缓冲层的影响。特别是，缓冲层是在不同条件下生长的。然后检查了沉积态和快速热退火的ZnO：P薄膜的传输性能。所沉积的膜显示出n型导电性。快速热退火后，在低温下生长的缓冲层上的膜对于特定的生长条件显示出载体类型向p型的转化，而在高温下生长的缓冲层上沉积的膜无论生长条件如何都保持n型。沉积在低温下生长的缓冲层上的薄膜在快速热退火后表现出更高的电阻率和更显着的传输性能变化。这些结果表明，在具有更高缺陷密度的膜中掺入了更多的掺杂剂。这与在不同缓冲层上掺杂磷的ZnO薄膜的高分辨率x射线衍射结果一致。此外，掺杂磷的ZnO薄膜的微观结构基本上受到缓冲层的影响。

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