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Fabrication of polyimide sacrificial layers with inclined sidewalls based on reactive ion etching

机译:基于反应离子刻蚀的具有倾斜侧壁的聚酰亚胺牺牲层的制备

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Polyimide is used as a sacrificial material because of its low stress, its removable ability and its compatibility with standard micromachining processes. In this work, polyimide structures with inclined sidewalls are fabricated with a reactive ion etching process, where SiO2 is used as the hard-mask material. The structures can be further used as sacrificial layers in micro-electro-mechanical systems infrared (IR) sensors to support IR absorbers, to realize the thermal connections between the absorbers and the thermopiles, and to scale down the size of the sensors. As a result, IR sensors with low-residual-stress absorption, high structural stability, low heat loss and small dimensions can be achieved.
机译:聚酰亚胺由于其低应力,可移除能力以及与标准微加工工艺的兼容性而被用作牺牲材料。在这项工作中,采用反应离子刻蚀工艺制造了具有倾斜侧壁的聚酰亚胺结构,其中SiO2被用作硬掩模材料。该结构还可以用作微机电系统红外(IR)传感器中的牺牲层,以支撑IR吸收器,实现吸收器和热电堆之间的热连接,并缩小传感器的尺寸。结果,可以获得具有低残余应力吸收,高结构稳定性,低热损失和小尺寸的IR传感器。

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