Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Yan Gu; Dongmei Chang; Haiyan Sun; Jicong Zhao; Guofeng Yang; Zhicheng Dai; Yu Ding

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Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

机译：具有极化梯度AlGaN背势垒层的InAlN / GaN高电子迁移率晶体管（HEMT）的理论研究

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An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In 0.17 Al 0.83 N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al 0.1 Ga 0.9 N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier.

机译：设计了一种插入的新型极化渐变AlGaN背势垒结构，以增强In 0.17 Al 0.83 N / GaN高电子迁移率晶体管（HEMT）的性能，这是通过二维漂移扩散仿真研究的。结果表明，由于GaN / AlGaN异质结界面处的导带不连续性约为0.46 eV，梯度AlGaN背势垒HEMT的载流子约束得到了显着改善。同时，可以通过梯度Al成分降低寄生电子通道的二维电子气（2DEG）浓度，从而导致完全的晶格弛豫而无压电极化，这与常规的Al 0.1 Ga 0.9 N背垒HEMT相比。此外，与具有固定Al含量的常规背栅HEMT相比，渐变的AlGaN背栅可以产生更高的跨导，更高的电流和更好的射频性能。

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《Electronics》 |2019年第8期|共10页
作者
Yan Gu; Dongmei Chang; Haiyan Sun; Jicong Zhao; Guofeng Yang; Zhicheng Dai; Yu Ding;
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中图分类电工技术;
关键词
In 0.17 Al 0.83 N/GaN HEMTgraded-polarizationback barrierparasitic electron channelelectron confinement;

机译：In 0.17 Al 0.83 N / GaN HEMT偏极化背势垒寄生电子沟道电子约束;

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1. Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer [J] . Yan Gu, Dongmei Chang, Haiyan Sun, Electronics . 2019,第8期

机译：具有极化梯度AlGaN背势垒层的InAlN / GaN高电子迁移率晶体管（HEMT）的理论研究
2. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates [J] . Ahmadi Elaheh, Wu Feng, Li Haoran, Semiconductor science and technology . 2015,第5期

机译：N面GaN / AlN / GaN / InAlN和GaN / AlN / AlGaN / GaN / InAlN高电子迁移率晶体管结构，通过等离子体辅助分子束外延在邻近衬底上生长
3. InAlN barrier layer for GaN-based FET InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface [J] . Masanobu HIROKI, Narihiko MAEDA, Takashi KOBAYASHI, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2009,第98期

机译：具有高电子迁移率和平坦表面的GaN基FET InAlN / AlGaN / GaN异质结构的InAlN势垒层
4. Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier [C] . Lucci Luca, Barbe Jean-Charles, Pala Marco International Conference on Simulation of Semiconductor Processes and Devices . 2015

机译：具有InAlN背势垒的AlGaN / GaN HEMT的全量子研究
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band [O] . Junfeng Li, Shuman Mao, Yuehang Xu, 2018

机译：0.1μmAlGaN / GaN高电子迁移率晶体管（HEMT）工艺的改进大信号模型及其在W波段实用单片微波集成电路（MMIC）设计中的应用
7. Impact of buffer layers on thermal properties of AlGaN/GaN-on-SiC high electron mobility transistors (HEMTs) [O] . Power Maire, Pomeroy James, Anaya Calvo Julian, 2014

机译：缓冲层对AlGaN / SiC上的GaN高电子迁移率晶体管（HEMT）的热性能的影响
8. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

机译：si，GaN和alGaN / GaN高电子迁移率晶体管（HEmT）晶片的非接触迁移率，载流子密度和薄层电阻测量。

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

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