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Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

机译：退火引起的升华生长立方碳化硅点缺陷性质的变化

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In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications, such as intermediate-band solar cells, photoelectrochemical water splitting, and quantum key distribution, just to name a few. All these applications critically depend on further understanding of defect behavior at the atomic level and the possibility to actively control distinct defects. In this work, dopants as well as intrinsic defects were introduced into the 3C-SiC material in situ during sublimation growth. A series of isochronal temperature treatments were performed in order to investigate the temperature-dependent annealing behavior of point defects. The material was analyzed by temperature-dependent photoluminescence (PL) measurements. In our study, we found a variation in the overall PL intensity which can be considered as an indication of annealing-induced changes in structure, composition or concentration of point defects. Moreover, a number of dopant-related as well as intrinsic defects were identified. Among these defects, there were strong indications for the presence of the negatively charged nitrogen vacancy complex (N C –V Si ) ? , which is considered a promising candidate for spin qubits.
机译：近年来，立方碳碳化硅（3C-SiC）作为用于节能和光电子应用的半导体材料，例如中间带太阳能电池，光电化学水分解和量子密钥分配等，引起了越来越多的关注。所有这些应用至关重要地取决于对原子级缺陷行为的进一步理解以及主动控制明显缺陷的可能性。在这项工作中，在升华生长过程中，将掺杂剂以及固有缺陷引入了3C-SiC材料中。为了研究点缺陷的温度依赖性退火行为，进行了一系列等时温度处理。通过与温度有关的光致发光（PL）测量来分析该材料。在我们的研究中，我们发现了总PL强度的变化，可以将其视为退火引起的点缺陷的结构，成分或浓度变化的指示。此外，还发现了许多与掺杂剂有关的缺陷以及固有缺陷。在这些缺陷中，有强烈的迹象表明存在带负电荷的氮空位络合物（N C –V Si）？ ，它被认为是自旋量子位的有希望的候选者。

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