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首页> 外文期刊>Materials Research Letters >Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD
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Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD

机译：低速率逐层PVD低温生长外延Ti2AlC MAX相薄膜

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Here we report on the structural and tribo-mechanical characterization of epitaxial single-crystalline Ti_(2)AlC MAX phase thin films, grown by means of electron beam physical vapor deposition at relatively low temperature (700°C). The growth of phase pure Ti_(2)AlC at a relatively lower temperature when compared to other PVD methods was achieved utilizing a relatively low deposition rate and layer-by-layer deposition technique. The epitaxial growth is evidenced through the combination of XRD, HR-TEM and Raman spectroscopy measurements. The nanomechanical and micro-scale tribological properties of the Ti_(2)AlC thin films were studied by means of nanoindentation and nanoscratch tests.
机译：在这里我们报告外延单晶Ti_（2）AlC MAX相薄膜的结构和摩擦力学特性，这些薄膜是通过在相对较低的温度（700°C）下通过电子束物理气相沉积而生长的。与其他PVD方法相比，纯相Ti_（2）AlC在较低温度下的生长是利用较低的沉积速率和逐层沉积技术实现的。通过XRD，HR-TEM和拉曼光谱测量的结合证明了外延生长。通过纳米压痕和划痕试验研究了Ti_（2）AlC薄膜的纳米力学和微观摩擦学性能。

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