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首页> 外文期刊>Crystal growth & design >HKUST-1 Thin Film Layer-by-Layer Liquid Phase Epitaxial Growth: Film Properties and Stability Dependence on Layer Number
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HKUST-1 Thin Film Layer-by-Layer Liquid Phase Epitaxial Growth: Film Properties and Stability Dependence on Layer Number

机译：HKUST-1薄膜层状液相外延生长：膜的性质和稳定性对层数的依赖性

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摘要

The layer-by-layer epitaxial growth of HKUST-1 (Cu-3(btc)(2) where btc = 1,3,5-benzenetricarboxylate) thin films is measured by quartz crystal microbalance with dissipation monitoring (QCM-D), X-ray diffraction (XRD), and scanning electron microscopy (SEM) as a function of the number of layers (20-80 layers) for -OH and -COOH functionalized surfaces. Up to approximately 40 layers, the film growth proceeds by a layer-by-layer mode controlled by the chemical functionalization of the surface. For example, on hydroxylated SiO2, film growth is in the preferred [222] direction. Beyond 40 layers, for both -COOH and -OH functionalized surfaces, the crystallite grain size increases and similar to 50-100 nm octahedral crystals are formed. Independent of the surface functional groups (-COOH and -OH), the octahedral crystals form with the {200} planes oriented parallel to the surface. By monitoring changes in mass and dissipation, the QCM data provides evidence for the change in growth behavior. The stability of the films, determined by measuring CO2 adsorption isotherms, depends on film properties (morphology and grain size) as well as film age. For films deposited on hydroxylated SiO2 surfaces, CO2 uptake decreases rapidly within a few days after film synthesis with the 40 layer films ({222} planes) exhibiting a more pronounced decrease than the 80 layer films ({200} planes, octahedral crystals). The decrease in CO2 uptake is attributed to the differing propensities for water uptake in thin films of different morphologies as evidenced by water vapor adsorption isotherms and Raman spectral changes.
机译：HKUST-1（Cu-3（btc）（2），其中btc = 1,3,5-苯三甲酸酯）薄膜的逐层外延生长是通过石英晶体微量天平通过耗散监测（QCM-D）进行测量的， X射线衍射（XRD）和扫描电子显微镜（SEM）随-OH和-COOH官能化表面的层数（20-80层）而变。多达约40层，薄膜的生长是通过逐层模式进行的，该模式由表面的化学功能化控制。例如，在羟基化的SiO2上，膜的生长方向是优选的[222]方向。对于-COOH和-OH官能化的表面，超过40层时，晶粒尺寸增加，并形成类似于50-100 nm的八面体晶体。与表面官能团（-COOH和-OH）无关，八面体晶体的形成是{200}平面平行于表面定向的。通过监测质量和耗散的变化，QCM数据为生长行为的变化提供了证据。通过测量CO2吸附等温线来确定薄膜的稳定性，取决于薄膜的性能（形态和晶粒尺寸）以及薄膜的老化时间。对于沉积在羟基化SiO2表面上的薄膜，在薄膜合成后的几天内，CO 2吸收迅速降低，其中40层薄膜（{222}面）比80层薄膜（{200}面，八面体晶体）表现出更明显的降低。 CO 2吸收的减少归因于不同形态的薄膜中不同的水吸收倾向，如水蒸气吸附等温线和拉曼光谱变化所证明的。

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