Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETs

Wang J.; Kistler N.

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Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETs

机译：部分耗尽的薄膜SOI MOSFET在低温下的阈值电压不稳定性

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A threshold voltage instability phenomenon at low temperatures in partially depleted thin-film silicon-on-insulator (SOI) SIMOX (separation by implantation of oxygen) MOSFETs is reported. This phenomenon was investigated under normal MOSFET operating conditions for temperatures ranging from 300 K down to 10 K, with both the magnitude and duration of the instability observed to be strongly dependent on temperature. Threshold voltage shifts as small as 0 V at room temperature and as large as 0.29 V at 10 K are reported. The duration of the instability ranged in the tens of minutes and was observed to increase as the temperature was decreased.

机译：据报道，在部分耗尽的绝缘体上薄膜硅（SOI）SIMOX（通过注入氧进行分离）MOSFET中，在低温下存在阈值电压不稳定性现象。在300 K至10 K的正常MOSFET工作条件下对这种现象进行了研究，观察到的不稳定程度和持续时间都与温度密切相关。据报道，在室温下阈值电压偏移小至0 V，而在10 K时阈值电压大至0.29V。不稳定的持续时间在数十分钟内，并且观察到随着温度降低而增加。

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《IEEE Electron Device Letters》 |1991年第6期|P.300-302|共3页
作者
Wang J.; Kistler N.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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1. Partially Depleted SOI Versus Deep N-Well Protected Bulk-Si MOSFETs: A High-Temperature RF Study for Low-Voltage Low-Power Applications [J] . Emam M., Raskin J.-P. Microwave Theory and Techniques, IEEE Transactions on . 2013,第4期

机译：部分耗尽的SOI与受N阱保护的体硅MOSFET相比：针对低压低功率应用的高温RF研究
2. Temperature dependence of threshold voltage in thin-film SOI MOSFETs [J] . Groeseneken G., Colinge J.-P. IEEE Electron Device Letters . 1990,第8期

机译：薄膜SOI MOSFET中阈值电压的温度依赖性
3. Threshold voltage control range in variable threshold voltage fully-depleted SOI MOSFETs [J] . Toshiharu Nagumo, Takashi Inukai, Atsumasa Ohsawa, 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2002,第273期

机译：可变阈值电压全耗尽SOI MOSFET的阈值电压控制范围
4. Threshold voltage instability at low temperatures in partially depleted thin film SOI MOSFETs [C] . Wang, J., Kistler, . 1990

机译：部分耗尽的薄膜SOI MOSFET在低温下的阈值电压不稳定性
5. Cause and effect of threshold-voltage instability on the reliability of silicon-carbide mosfets [D] . Lelis, Aivars J. 2011

机译：阈值电压不稳定性对碳化硅mosfet可靠性的原因和影响
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Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETs

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