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首页> 外文期刊>IEEE Transactions on Electron Devices >Quality improvement in a-Si films and their application to a-Si solar cells
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Quality improvement in a-Si films and their application to a-Si solar cells

机译：非晶硅薄膜的质量改进及其在非晶硅太阳能电池中的应用

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摘要

A theoretical analysis conducted in order to raise the efficiency of amorphous-silicon (a-Si) solar cells is discussed. Based on the analysis, the quality of the i and p layers was improved. A high-quality a-Si film with a lower impurity concentration and lower defect density than conventional films was fabricated using the super chamber. A reduction in damage to the transparent conductive oxide and an improvement in p and i interface properties was achieved by using a photo-CVD method. This same method was used to study superlattice structure films, to fabricate high-conductivity films with a wider optical bandgap than conventional a-SiC films, and to improve sensitivity in the short-wavelength region. B(CH/sub 3/)/sub 3/ was used as a p-type doping gas for a-Si film that had a higher quality than that fabricated using B/sub 2/H/sub 6/. These technologies made possible a conversion efficiency of 11.7% for 1-cm/sup 2/ single-junction solar cells and a total area conversion efficiency of 9.60% for 100-cm/sup 2/ single-junction integrated-type submodules.
机译：讨论了为提高非晶硅（a-Si）太阳能电池效率而进行的理论分析。在分析的基础上，提高了i和p层的质量。使用超级腔室制造了比传统薄膜具有更低杂质浓度和更低缺陷密度的高质量a-Si薄膜。通过使用光CVD方法，减少了对透明导电氧化物的损害并改善了p和i界面性能。相同的方法用于研究超晶格结构薄膜，制造具有比常规a-SiC薄膜更宽的光学带隙的高导电性薄膜，并提高短波长区域的灵敏度。 B（CH / sub 3 /）/ sub 3 /被用作a-Si膜的p型掺杂气体，其质量高于使用B / sub 2 / H / sub 6 /制造的质量。这些技术使1-cm / sup 2 /单结太阳能电池的转换效率达到11.7％，而100cm / sup 2 /单结集成型子模块的总面积转换效率达到9.60％。

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