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首页> 外文期刊>IEE Proceedings. Part J >Light sources for wavelengths > 2μm grown by MBE on InP using a strain relaxed buffer
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Light sources for wavelengths > 2μm grown by MBE on InP using a strain relaxed buffer

机译：MBE使用应变松弛缓冲液在InP上通过MBE生长的波长>2μm的光源

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摘要

Light emitting diodes (LEDs) and lasers operating in the 2 to 3 mp spectral region at room temperature are been demonstrated. The devices were fabricated from In_xGa_1-xAs/InAs_yP_1-y double heterostructures grown on n-type InP (100) substrates by molecular beam epitaxy. A strain relaxed buffer layer which incorporates composition reversals was used to reduce the threading dislocation density and to accommodate the large lattice mismatch (up to 2.7/100) between the InP substrate and the device active region. Efficient electroluminescence emission at wavelengths between 2 and 3μm was obtained from the LEDs at room temperature, while diode lasers exhibited coherent emission in the range 2-2.6μm at temperatures up to 130K. For one of the LEDs a characteristic absorption was readily observed at 2.7μm in the diode electroluminescence emission spectrum, corresponding to strong water vapour absorption in the atmosphere. These devices could easily form the key component of an infrared gas sensor for water vapour detection and monitoring at 2.7μm in a variety of different applications.
机译：演示了在室温下在2至3 mp光谱范围内工作的发光二极管（LED）和激光器。该器件由通过分子束外延生长在n型InP（100）衬底上的In_xGa_1-xAs / InAs_yP_1-y双异质结构制成。结合成分反转的应变松弛缓冲层用于降低穿线位错密度并适应InP衬底与器件有源区之间的较大晶格失配（最高达2.7 / 100）。在室温下，从LED可获得2到3μm波长之间的有效电致发光发射，而在高达130K的温度下，二极管激光器的相干发射在2-2.6μm范围内。对于其中一种LED，在二极管电致发光发射光谱中的2.7μm处很容易观察到特征吸收，这对应于大气中强烈的水蒸气吸收。这些设备可以轻松构成红外气体传感器的关键组件，用于在各种不同应用中检测和监控2.7μm的水蒸气。

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