Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors

Danelon V.; Aniel F.

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Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors

机译：基于InP的双异质结基极-集电极自对准双极晶体管的噪声参数

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The noise performances of a new base-collector self-aligned technology of double-heterojunction single-finger InGaAs-InP bipolar transistor are investigated at 300 K. Noise parameter variations are studied versus frequency in the 2-18 GHz range, versus collector current and emitter area. A low minimum noise figure F/sub min/=0.6 dB is demonstrated at 2 GHz with a 4.8-/spl mu/m/sup 2/ emitter. Variations of F/sub min/ show a minimum versus collector current. The high cutoff frequencies of the devices limit the increase of F/sub min/ versus frequency.

机译：研究了一种双基极结单指InGaAs-InP双极晶体管的新型基极-集电极自对准技术在300 K下的噪声性能。研究了噪声参数随频率在2-18 GHz范围内，与集电极电流和发射器区域。在2 GHz和4.8- / spl mu / m / sup 2 /发射器的情况下，证明了最低的最小噪声系数F / sub min / = 0.6 dB。 F / sub min /的变化显示了最小与集电极电流的关系。器件的高截止频率限制了F / sub min /对频率的增加。

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《IEEE Microwave and Guided Wave Letters》 |1999年第5期|P.195-197|共3页
作者
Danelon V.; Aniel F.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a step-graded base-collector heterojunction [J] . Willen B., Westergren U. IEEE Electron Device Letters . 1995,第11期

机译：具有逐步分级的基极-集电极异质结的高增益，高速InP / InGaAs双异质结双极晶体管
2. A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors [J] . Hsu S.S.H., Pavlidis D. IEEE Transactions on Electron Devices . 2003,第9期

机译：基于NPN和PNP InP的异质结双极晶体管的低频噪声特性和噪声源的比较
3. Comparative study of InP/InGaAs double heterojunction bipolar transistors with InGaAsP spacer at base-collector junction [J] . Tsai J.-H., Lee C.-S., Jhou J.-C., Semiconductors . 2013,第10期

机译：在基极-集电极结处具有InGaAsP隔离层的InP / InGaAs双异质结双极晶体管的比较研究
4. Degradation of RF and Noise Characteristics of InP/InGaAs Double Heterojunction Bipolar Transistors under High Reverse Base-Collector Voltage [C] . H. Wang, C. W. Ng International Symposium on the Physical and Failure Analysis of Integrated Circuits . 2009

机译：高反向基 - 集电极电压下INP / INGAAS双异质结双极晶体管RF和噪声特性的降解
5. Technology and physical parameter extraction formalisms for the high-frequency optimization of self-aligned gallium arsenide/aluminum gallium arsenide heterojunction bipolar transistors. [D] . Pehlke, David Richard. 1994

机译：自对准砷化镓/砷化铝镓异质结双极晶体管高频优化的技术和物理参数提取形式。
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

机译：用于高效光伏转换的三端异质结双极晶体管太阳能电池
7. A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector [O] . Yang YF, Yang ES, Ou HJ, 1996

机译：一种高频GaInp / Gaas异质结双极晶体管，采用选择性埋入式子集电极，具有降低的基极 - 集电极电容
8. Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-Aligned Double Mesa Technology [R] . Lu, Liang-Hung, Mohammadi, Saeed, Ma, Zhen-Qiang, 2001

机译：功率siGe异质结双极晶体管（HBT）采用全自对准双mesa技术制造

Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors

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