1-8-GHz GaN-based power amplifier using flip-chip bonding

Xu J.J.; Yi-Feng Wu

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1-8-GHz GaN-based power amplifier using flip-chip bonding

机译：使用倒装芯片键合的1-8 GHz GaN基功率放大器

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We report the first gallium nitride (GaN)-based broad-band power amplifier. The circuit was fabricated on an AlN substrate using AlGaN-GaN power high-electron mobility transistors (HEMTs), grown on sapphire substrates, which were flip-chip bonded for thermal management. The amplifier employed a modified traveling-wave power amplifier (TWPA) topology that eliminated the backward wave of conventional TWPAs. Using four HEMTs each with 0.75-/spl mu/m gate length and 0.75-mm gate periphery, a small-signal gain of /spl sim/7 dB was obtained with a bandwidth of 1-8 GHz. At mid-band, an output power of 3.6 W was obtained when biased at V/sub ds/=18 V and 4.5 W when biased at V/sub ds/=22 V.

机译：我们报告了第一款基于氮化镓（GaN）的宽带功率放大器。该电路使用在蓝宝石衬底上生长的AlGaN-GaN功率高电子迁移率晶体管（HEMT）在AlN衬底上制造，并通过倒装芯片键合进行热管理。该放大器采用改进的行波功率放大器（TWPA）拓扑，消除了传统TWPA的反向波。使用四个每个具有0.75- / splμ/ m的栅极长度和0.75-mm栅极边缘的HEMT，在1-8 GHz的带宽下获得了/ spl sim / 7 dB的小信号增益。在中频带，当以V / sub ds / = 18 V偏置时，输出功率为3.6 W；当以V / sub ds / = 22 V偏置时，输出功率为4.5W。

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《IEEE Microwave and Guided Wave Letters》 |1999年第7期|P.277-279|共3页
作者
Xu J.J.; Yi-Feng Wu;
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中图分类无线电电子学、电信技术;
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1. A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier [J] . Xu J.J., Keller S. IEEE Transactions on Microwave Theory and Techniques . 2000,第12期

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2. High-stability reflective bonding pads for GaN-based flip-chip light-emitting diodes packaged by reflow soldering [J] . Xu Linlin, Xu Jin, Zhang Wei, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2019,第26期

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3. GaN-based mid-power flip-chip light-emitting diode with high-3 dB bandwidth for visible light communications [J] . Zhou Zheng, Yan Bing, Ma Xuejin, Applied optics . 2018,第11期

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4. CPW MMIC power amplifier design for flip-chip packaged power amplifiers [C] . Wong, A., McAdoo, High Frequency Postgraduate Student Colloquium, 2000 . 2000

机译：用于倒装芯片封装功率放大器的CPW MMIC功率放大器设计
5. Aluminum gallium nitride/gallium nitride high-electron-mobility-transistors based flip-chip integrated broadband power amplifiers [D] . Xu, Jian 2000

机译：基于氮化铝镓/氮化镓高电子迁移率晶体管的倒装芯片集成宽带功率放大器
6. Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes [O] . Shengjun Zhou, Haohao Xu, Mengling Liu, 2018

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7. Output power enhancement of GaN-based flip-chip light-emitting diodes via conical structures generated by a monolayer of nanospheres [O] . Mai-Chih Liu, Chang-Rong Lin, Chia-Hua Chan 2016

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8. A 90 GHz Amplifier Assembled Using Flip-Chip Technology [R] . Samoska, L., Pinsukanjana, P., Gaier, T., 1999

机译：采用倒装芯片技术组装的90 GHz放大器

1-8-GHz GaN-based power amplifier using flip-chip bonding

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