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Suppression of the CPW leakage in common millimeter-wave flip-chip structures

机译:常见毫米波倒装芯片结构中CPW泄漏的抑制

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摘要

Leakage phenomena in GaAs flip-chip structures, mounted on common GaAs and alumina main substrates, are studied using the spectral domain approach with the goal of reducing possible chip-to-chip crosstalk and transmission resonance. We have found that the TM/sub 0/ parallel-plate mode in the main substrate is dominant for the coplanar waveguide flip-chip leakage, and that the leakage can be suppressed by properly selecting the gap height and the main substrate thickness in addition to the dielectric constant.
机译:为了减少可能的芯片间串扰和传输谐振,使用频谱域方法研究了安装在普通GaAs和氧化铝主基板上的GaAs倒装芯片结构中的泄漏现象。我们发现,主基板中的TM / sub 0 /平行板模式是共面波导倒装芯片泄漏的主要原因,并且除了适当选择间隙高度和主基板厚度以外,还可以抑制泄漏介电常数。

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