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首页> 外文期刊>IEEE Photonics Technology Letters >Simple analysis of carrier transport and buildup in separate confinement heterostructure quantum well lasers
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Simple analysis of carrier transport and buildup in separate confinement heterostructure quantum well lasers

机译:简单分析不同局限异质结构量子阱激光器中的载流子传输和聚集

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摘要

A simple, analytical model for carrier transport and buildup in the separate confinement layer of a quantum well laser is developed. The time constant characterizing the low-frequency roll-off is separated into components describing electron and hole transport and components related to the charge storage effects arising from electron and hole capture. In contrast to previous work, the analysis shows that both the transport and capture related delays are sensitive to the placement of the well within the separate confinement heterostructure and that the carrier concentrations change abruptly across the quantum well.
机译:建立了一个简单的分析模型,用于在量子阱激光器的单独限制层中进行载流子传输和聚集。表征低频衰减的时间常数分为描述电子和空穴传输的成分以及与由电子和空穴捕获产生的电荷存储效应有关的成分。与以前的工作相反,分析表明,与传输和捕获相关的延迟都对阱在单独的限制异质结构中的位置敏感,并且载流子浓度在整个量子阱中突然改变。

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