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首页> 外文期刊>IEEE transactions on nanotechnology >Experimental Study on Electron Mobility in In$_{x}$ Ga$_{1-x}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering
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Experimental Study on Electron Mobility in In$_{x}$ Ga$_{1-x}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

机译：In $ _ {x} $ Ga $ _ {1-x} $ As绝缘子上金属-氧化物-半导体场效应晶体管的电子迁移率实验研究，该晶体管具有内容调制和MOS接口缓冲器工程

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摘要

In this paper, we study the electron transport properties of thin-body In $_{x}$Ga$_{1-x}$As-on-insulator (In $_{x}$Ga$_{1-x}$ As-OI) metal–oxide–semiconductor field-effect transistors (MOSFETs) using two types of mobility enhancement engineering: an increase in the Indium (In) content of InGaAs channels and MOS interface buffer engineering. We have demonstrated a high peak mobility of 3180 cm$^{2}$ /(V·s) in our InAs-on-insulator (InAs-OI) MOSFETs, which were fabricated on Si substrates with MOS interface buffer layers by direct wafer bonding. The scattering mechanisms for the electron mobility in In $_{x}$Ga$_{1-x}$ As-OI MOSFETs are systematically analyzed and identified. We conclude that the increase of the In content enhances phonon-limited mobility, whereas the use of the MOS interface buffer enhances thickness-fluctuation-limited mobility through the suppression of thickness fluctuation at the MOS interface.
机译：在本文中，我们研究了In $ _ {x} $ Ga $ _ {1-x} $ 绝缘子（在 $ _ {x} $ Ga $ _ {1-x} $ As- OI）金属氧化物半导体场效应晶体管（MOSFET）使用两种类型的迁移率增强工程：InGaAs通道中铟（In）含量的增加和MOS接口缓冲区工程。我们在InAs-中证明了3180 cm $ ^ {2} $ /（V·s）的高峰迁移率-绝缘体上（InAs-OI）MOSFET，是通过直接晶圆键合在具有MOS接口缓冲层的Si基板上制造的。 In <公式式=“ inline”> $ _ {x} $ Ga <公式式=“ inline”> $ _ {1-x} $ As-OI MOSFET。我们得出的结论是，In含量的增加增强了声子限制的迁移率，而MOS接口缓冲器的使用通过抑制MOS界面处的厚度波动来增强厚度限制的迁移率。

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