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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions
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Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

机译：利用光电化学反应对AlGaN / GaN HEMT进行低损伤刻蚀

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摘要

This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricating recessed-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). Selecting the proper light wavelength and voltage conditions enabled PEC etching on AlGaN/GaN heterostructures to produce smooth and flat surfaces. Self-termination phenomena observed under optimal PEC condition were useful for precisely controlling the etching depth in the AlGaN layer. Two types of HEMTs, i.e., Schottky-gate and metal-insulator-semiconductor (MIS)-gate, were fabricated. A recessed-gate AlGaN/GaN structure fabricated with PEC etching showed positive threshold voltage, and its variation was very small with a standard deviation of only 0.019 V for the Schottky-gate HEMTs and 0.032 V for the MIS-gate HEMTs. A recessed-gate structure with PEC etching showed better current transport controllability with a small subthreshold-slope than that of planar-gate and dry-etched-gate AlGaN/GaN structures.
机译：本文介绍了我们最近为优化光电化学（PEC）蚀刻以制造凹栅式氮化铝镓/氮化镓（AlGaN / GaN）高电子迁移率晶体管（HEMT）所做的努力。选择合适的光波长和电压条件，可以在AlGaN / GaN异质结构上进行PEC蚀刻，以产生光滑和平坦的表面。在最佳PEC条件下观察到的自终止现象可用于精确控制AlGaN层中的蚀刻深度。制造了两种类型的HEMT，即肖特基栅和金属绝缘体半导体（MIS）门。通过PEC蚀刻制造的凹栅AlGaN / GaN结构显示正阈值电压，其变化非常小，肖特基栅HEMT的标准偏差仅为0.019 V，MIS栅HEMT的标准偏差仅为0.032V。与平面栅极和干法刻蚀栅极的AlGaN / GaN结构相比，采用PEC刻蚀的凹入式栅极结构在亚阈值斜率较小的情况下表现出更好的电流传输可控性。

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