Electrical and reliability properties of PZT thin films for ULSI DRAM applications

Carrano J.; Sudhama C.

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Electrical and reliability properties of PZT thin films for ULSI DRAM applications

机译：用于ULSI DRAM应用的PZT薄膜的电气和可靠性特性

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The electrical and reliability characteristics of ferroelectric capacitors fabricated using sol-gel derived 50/50 lead-zirconate-titanate (PZT) thin films have been examined for ULSI DRAM (dynamic random access memory) applications. Various electrode materials, film thicknesses (200 nm to 600 nm) and capacitor areas were used. A large stored-energy density (Q/sub c/) of 15 mu C/cm/sup 2/ (at 125 kV/cm) was measured using different methods. The results indicate that PZT thin films exhibit material properties which might satisfy the requirements of ULSI DRAMs.

机译：使用溶胶凝胶衍生的50/50锆钛酸铅（PZT）薄膜制造的铁电电容器的电气和可靠性特性已针对ULSI DRAM（动态随机存取存储器）应用进行了检验。使用了各种电极材料，膜厚度（200 nm至600 nm）和电容器区域。使用不同的方法测量了15μC / cm / sup 2 /（在125 kV / cm时）的大储能密度（Q / sub c /）。结果表明，PZT薄膜具有可以满足ULSI DRAM要求的材料性能。

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《IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control》 |1991年第6期|P.690-703|共14页
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Carrano J.; Sudhama C.;
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1. Electrical characteristics of ferroelectric PZT thin films for DRAM applications [J] . Moazzami R., Hu C. IEEE Transactions on Electron Devices . 1992,第9期

机译：DRAM应用中的铁电PZT薄膜的电气特性
2. Piezoelectric and electrical properties of PZT-PSN thin film ceramics for MEMS applications [J] . Seong Kon Kim, Cheol-Su Kim, Kyung Wha Lee, Materials science in semiconductor processing . 2002,第2a3期

机译：MEMS应用的PZT-PSN薄膜陶瓷的压电和电性能
3. The Influence of Particle Size of Acetic Acid Modified PZT Precursor Solution on the Crystallization and Electrical Properties of Sol-Gel Processed PZT Thin Films [J] . Q.Zhang, Z.Huang Integrated Ferroelectrics . 1999,第1a4期

机译：醋酸改性PZT前驱体溶液的粒径对溶胶-凝胶法制备PZT薄膜的结晶和电性能的影响
4. Electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications [C] . Carrano, J., Sudhama, . 1989

机译：DRAM应用中的钛酸锆钛铁（PZT）铁电薄膜的电气和可靠性特性
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8. Electrical properties of sol-gel PZT thin films for decoupling capacitor applications. [R] . Schwartz, R. W., Dimos, D., Lockwood, S. J., 1992

机译：用于去耦电容器应用的溶胶 - 凝胶pZT薄膜的电学特性。

Electrical and reliability properties of PZT thin films for ULSI DRAM applications

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