Single atomic steps on SiC polished surfaces

P. Vicente; D. Chaussende

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Single atomic steps on SiC polished surfaces

机译：SiC抛光表面上的单原子台阶

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On-axis _4H-SiC and 6H-SiC are very promising material for respectively electronics and optoelectronics applications. Compared to GaN and sapphire, the reduced lattice mismatch between GaN and SiC combined with a high thermal conductivity makes 6H-SiC a good substrate for the growth of Group Ill-nitride epitaxial layers. Wafer surface preparation before epitaxial growth is a critical step. This is because every defect on the surface of the substrate is a potential source of defect in the epitaxial layer. In a similar way, the initial surface roughness acts as the limiting factor for the final roughness of the epitaxial layer. The most recent SiC polishing process developed by NOVASiC produces atomically flat surface, free of scratch and damaged layer.

机译：同轴_4H-SiC和6H-SiC是分别用于电子和光电应用的非常有前途的材料。与GaN和蓝宝石相比，减少的GaN和SiC之间的晶格失配以及高导热率使6H-SiC成为生长III族氮化物外延层的良好衬底。外延生长之前的晶片表面准备是关键步骤。这是因为基板表面上的每个缺陷都是外延层中潜在的缺陷源。以类似的方式，初始表面粗糙度用作外延层的最终粗糙度的限制因素。 NOVASiC开发的最新SiC抛光工艺可产生原子平坦的表面，无划痕和损坏层。

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来源
《III-Vs Review》 |2002年第4期|p.46-47|共2页
作者
P. Vicente; D. Chaussende;
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作者单位

NOVASiC, Savoie Technolac, BP267, 73375 Le Bourget du Lac Cedex (France);

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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers [J] . Zhou Yan, Pan Guoshun, Shi Xiaolei, Tribology International . 2015,第Null期

机译：超光滑表面原子台阶形态对蓝宝石和SiC晶片化学机械抛光（CMP）性能的影响
2. Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface [J] . K. Yamamura, T. Takiguchi, M. Ueda, CIRP Annals . 2011,第1期

机译：等离子辅助抛光单晶SiC，以获得原子平坦的无应变表面
3. Density functional calculations for structures and energetics of atomic steps and their implication for surface morphology on Si-face SiC polar surfaces [J] . Kaori Seino, Atsushi Oshiyama Physical review . 2020,第19期

机译：原子阶段结构和能量计算的密度函数计算及其对Si面SiC极性表面的表面形态的含义
4. Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces [C] . P. Vicente, E. Pernot, D. Chaussende, International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan . 2001

机译：6H和15R-SiC抛光表面的原子步观察
5. Atomic structure of ferroelectric domain walls, free surfaces and steps. [D] . Yavari, Arash. 2004

机译：铁电畴壁，自由表面和台阶的原子结构。
6. Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001) [O] . Hui Deng, Katsuyoshi Endo, Kazuya Yamamura -1

机译：表面改性和磨料抛光之间的竞争：控制4H-SiC表面原子结构的方法（0001）
7. Single atomic steps on SiC polished surfaces [O] . Vicente P., Chaussende D. 2002

机译：SiC抛光表面上的单原子台阶
8. Single Step Lapping and Polishing Process for Achieving Surfaces of Compound Semiconductors with Atomic Flatness using a Sub-micron Agglomerate-free Alumina Slurry [R] . Dutta, P. S., Rajagopalan, G., Gutmann, R. J., 2002

机译：使用亚微米无团聚氧化铝浆料实现具有原子平坦度的复合半导体表面的单步研磨和抛光工艺

Single atomic steps on SiC polished surfaces

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